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PDF GT50G321 Data sheet ( Hoja de datos )
| Número de pieza | GT50G321 | |
| Descripción | Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT50G321 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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GT50G321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50G321
The 4th Generation
Current Resonance Inverter Switching Applications
Unit: mm
· FRD included between emitter and collector
· Enhancement-mode
· High speed: tf = 0.30 µs (typ.) (IC = 60 A)
· Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector foward
current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
400
±25
50
100
15
30
130
150
−55 to 150
Equivalent Circuit
Unit
V
V
A
A
W
°C
°C
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2002-12-11
1 page  
Reverse Bias SOA
300
100
50
30
10
5
3 Tj ≤ 125°C
VGE = ±15 V
RG = 39 Ω
1
13
10
30
100 300
Collector-emitter voltage VCE (V)
1000
GT50G321
rth (t) – tw
102
Tc = 25°C
101
Diode stage
100
10−1
IGBT stage
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
50
Common collector
VGE = 0
40
IF – VF
30
20
10 Tc = 125°C 25
−40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10
trr
5
3 Irr
1
0
100
50
Common collector
di/dt = −100 A/µs
VGE = 0
Tc = 25°C
30
10
4 8 12 16 20
Forward current IF (A)
Cj – VR
500
f = 1 MHz
300 Tc = 25°C
100
50
30
10
5
3
1
3 5 10
30 50 100
300 500
Reverse voltage VR (V)
Irr, trr – di/dt
200 10
trr
8
Common collector
IF = 15 A
Tc = 25°C
6
100
4
Irr
2
00
0 40 80 120 160 200
di/dt (A/µs)
5 2002-12-11
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT50G321.PDF ] | |
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