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GT50J325 PDF даташит

Спецификация GT50J325 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT».

Детали детали

Номер произв GT50J325
Описание TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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GT50J325 Даташит, Описание, Даташиты
GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
Unit: mm
· The 4th generation
· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
· High speed: tf = 0.05 µs (typ.)
· Low switching loss: Eon = 1.30 mJ (typ.)
: Eoff = 1.34 mJ (typ.)
· Low saturation Voltage: VCE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFM
PC
Tj
Tstg
Rating
600
±20
50
100
50
100
240
150
-55 to 150
Unit
V
V
A
A
W
°C
°C
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.521
2.30
Unit
°C/W
°C/W
Equivalent Circuit
JEDEC
JEITA
TOSHIBA
Weight: 9.75 g
2-21F2C
Gate
Collector
Emitter
1









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GT50J325 Даташит, Описание, Даташиты
GT50J325
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Rise time
Turn-on time
Switching time
Turn-off delay time
Fall time
Turn-off time
Switching loss
Turn-on switching
loss
Turn-off switching
loss
Peak forward voltage
Reverse recovery time
IGES
ICES
VGE (OFF)
VCE (sat)
Cies
td (on)
tr
ton
td (off)
tf
toff
Eon
VGE = ±20 V, VCE = 0
VCE = 600 V, VGE = 0
IC = 5 mA, VCE = 5 V
IC = 50 A, VGE = 15 V
VCE = 10 V, VGE = 0, f = 1 MHz
Inductive load
VCC = 300 V, IC = 50 A
VGG = +15 V, RG = 13 W
(Note 1)
(Note 2)
¾
¾
3.5
¾
¾
¾
¾
¾
¾
¾
¾
¾
Eoff
VF IF = 50 A, VGE = 0
trr IF = 50 A, di/dt = -100 A/ms
¾
¾
¾
Note 1: Switching time measurement circuit and input/output waveforms
Typ. Max
¾
¾
¾
2.0
7900
0.09
0.07
0.24
0.30
0.05
0.43
±500
1.0
6.5
2.45
¾
¾
¾
¾
¾
¾
¾
1.30 ¾
1.34 ¾
¾ 4.2
65 ¾
Unit
nA
mA
V
V
pF
ms
mJ
V
ns
-VGE
IC
RG
L VCC
VCE
VGE
0
90%
IC
90%
0 VCE
10%
td (off)
tf
toff
10%
10%
90%
10%
td (on)
tr
ton
10%
Note 2: Switching loss measurement waveforms
VGE
0
90%
10%
IC
0 VCE
Eoff
5%
Eon
2









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GT50J325 Даташит, Описание, Даташиты
100 Common emitter
Tc = 25°C
80
IC – VCE
20 15 10
60
40
8
20
VGE = 7 V
0
012345
Collector-emitter voltage VCE (V)
GT50J325
VCE – VGE
20 Common emitter
Tc = -40°C
16
12
8 100
30 50
4
IC = 10 A
0
048
12 16 20
Gate-emitter voltage VGE (V)
VCE – VGE
20 Common emitter
Tc = 25°C
16
12
8 100
30 50
4
IC = 10 A
0
048
12 16 20
Gate-emitter voltage VGE (V)
VCE – VGE
20 Common emitter
Tc = 125°C
16
12
100
8
30 50
4
IC = 10 A
0
048
12 16
Gate-emitter voltage VGE (V)
20
100 Common emitter
VCE = 5 V
80
IC – VGE
60
40
20
Tc = 125°C
-40
25
0
0 4 8 12
16
Gate-emitter voltage VGE (V)
20
5 Common emitter
VGE = 15 V
VCE (sat) – Tc
4
3
2
1
100
70
50
30
IC = 10 A
0
-60 -20
20
60 100 140
Case temperature Tc (°C)
3










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