C2120 PDF даташит
Спецификация C2120 изготовлена «JIANGSU CHANGJIANG» и имеет функцию, называемую «NPN Transistor». |
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Детали детали
Номер произв | C2120 |
Описание | NPN Transistor |
Производители | JIANGSU CHANGJIANG |
логотип |
2 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Complementary to 2SA950
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.1mA,IC=0
VCB=35V,IE=0
VCE=25V,IB=0
VEB=5V,IC=0
VCE=1V, IC=100mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
35 V
30 V
5V
0.1 μA
0.1 μA
0.1 μA
100 320
0.5 V
0.8 V
13 pF
100 MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
B,Dec,2011
No Preview Available ! |
Typical Characterisitics
2SC2120
Static Characteristic
200
1mA 900uA
800uA
160 700uA
600uA
120 500uA
COMMON
EMITTER
Ta=25℃
400uA
80 300uA
200uA
40
IB=100uA
0
0.0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
V —— I
600
CEsat
C
β=25
300
100
Ta=100℃
Ta=25℃
30
h —— I
1000
FE C
COMMON EMITTER
VCE=1V
Ta=100℃
Ta=25℃
100
10
13
10 30
100 300 800
COLLECTOR CURRENT IC (mA)
V —— I
BEsat
C
2
β=25
1
Ta=25℃
Ta=100℃
10
13
10 30
100 300
COLLECTOR CURRENT IC (mA)
I —— V
800 C BE
COMMON EMITTER
300 VCE=1V
Ta=100℃
100
800
30
Ta=25℃
10
3
1
0.2
500
VCE=5V
Ta=25℃
0.4 0.6 0.8
BASE-EMMITER VOLTAGE VBE (V)
f —— I
TC
1.0
100
10
13
10 30
100
COLLECTOR CURRENT IC (mA)
0.1
1
100
30
10
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
800
C / C —— V / V
ob ib
CB EB
Cib
f=1MHz
IE=0/ IC=0
Ta=25℃
Cob
3
1
0.1
800
0.3 1 3
REVERSE VOLTAGE V (V)
P
C
——
T
a
10 20
600
400
200
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta (℃)
B,Dec,2011
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