DataSheet26.com

C2120 PDF даташит

Спецификация C2120 изготовлена ​​​​«JIANGSU CHANGJIANG» и имеет функцию, называемую «NPN Transistor».

Детали детали

Номер произв C2120
Описание NPN Transistor
Производители JIANGSU CHANGJIANG
логотип JIANGSU CHANGJIANG логотип 

2 Pages
scroll

No Preview Available !

C2120 Даташит, Описание, Даташиты
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES
z High DC Current Gain
z Complementary to 2SA950
TO – 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
0.8
600
208
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE
Cob
fT
Test conditions
IC= 0.1mA,IE=0
IC=10mA,IB=0
IE=0.1mA,IC=0
VCB=35V,IE=0
VCE=25V,IB=0
VEB=5V,IC=0
VCE=1V, IC=100mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=10mA
Min Typ Max Unit
35 V
30 V
5V
0.1 μA
0.1 μA
0.1 μA
100 320
0.5 V
0.8 V
13 pF
100 MHz
CLASSIFICATION OF hFE
RANK
RANGE
O
100-200
Y
160-320
B,Dec,2011









No Preview Available !

C2120 Даташит, Описание, Даташиты
Typical Characterisitics
2SC2120
Static Characteristic
200
1mA 900uA
800uA
160 700uA
600uA
120 500uA
COMMON
EMITTER
Ta=25
400uA
80 300uA
200uA
40
IB=100uA
0
0.0 0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
V —— I
600
CEsat
C
β=25
300
100
Ta=100
Ta=25
30
h —— I
1000
FE C
COMMON EMITTER
VCE=1V
Ta=100
Ta=25
100
10
13
10 30
100 300 800
COLLECTOR CURRENT IC (mA)
V —— I
BEsat
C
2
β=25
1
Ta=25
Ta=100
10
13
10 30
100 300
COLLECTOR CURRENT IC (mA)
I —— V
800 C BE
COMMON EMITTER
300 VCE=1V
Ta=100
100
800
30
Ta=25
10
3
1
0.2
500
VCE=5V
Ta=25
0.4 0.6 0.8
BASE-EMMITER VOLTAGE VBE (V)
f —— I
TC
1.0
100
10
13
10 30
100
COLLECTOR CURRENT IC (mA)
0.1
1
100
30
10
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
800
C / C —— V / V
ob ib
CB EB
Cib
f=1MHz
IE=0/ IC=0
Ta=25
Cob
3
1
0.1
800
0.3 1 3
REVERSE VOLTAGE V (V)
P
C
——
T
a
10 20
600
400
200
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE Ta ()
B,Dec,2011










Скачать PDF:

[ C2120.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C2120NPN TransistorJIANGSU CHANGJIANG
JIANGSU CHANGJIANG
C2120Silicon NPN Epitaxial Type TransistorToshiba Semiconductor
Toshiba Semiconductor
C2120NPN Plastic Encapsulated TransistorSeCoS
SeCoS
C2120Silicon NPN TransistorINCHANGE
INCHANGE

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск