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Datasheet C2120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | C2120 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Complementary to 2SA950
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJ |  JIANGSU CHANGJIANG | transistor |
| 2 | C2120 | Silicon NPN Epitaxial Type Transistor 1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collecto |  Toshiba Semiconductor | transistor |
| 3 | C2120 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SC2120
0.8 A , 35 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain Complementary to 2SA950
CLASSIFICATION OF hFE
Product-Rank 2SC2120-O
Range
100~200
2SC2120-Y 160~320
TO-9 |  SeCoS | transistor |
| 4 | C2120 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC2120
DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950
APPLICATIONS ·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collecto |  INCHANGE | transistor |
| 5 | C2120 | NPN EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC2120
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Volt |  Dc Components | transistor |
C21 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | C2104 | NPN Transistor, 2SC2104 Toshiba data | | |
| 2 | C2120 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Complementary to 2SA950
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJ JIANGSU CHANGJIANG transistor | | |
| 3 | C2120 | Silicon NPN Epitaxial Type Transistor 1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collecto Toshiba Semiconductor transistor | | |
| 4 | C2120 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SC2120
0.8 A , 35 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain Complementary to 2SA950
CLASSIFICATION OF hFE
Product-Rank 2SC2120-O
Range
100~200
2SC2120-Y 160~320
TO-9 SeCoS transistor | | |
| 5 | C2120 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC2120
DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950
APPLICATIONS ·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collecto INCHANGE transistor | | |
| 6 | C2120 | NPN EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
2SC2120
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Volt Dc Components transistor | | |
| 7 | C2120 | NPN Silicon Epitaxial Planar Transistor ST 2SC2120
NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications.
The transistor is subdivided into two groups, O and Y according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package We  SEMTECH transistor | |
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