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PDF NTMS10P02R2 Data sheet ( Hoja de datos )
| Número de pieza | NTMS10P02R2 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | ETC | |
| Logotipo |  |
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SOP-8
NTMS10P02R2
P-Channel MOSFET
1.50 0.15
1 Source
2 Source
3 Source
4 Gate
5 Drain
6 Drain
7 Drain
8 Drain
D
G
S
■ Features
● VDS (V) =-20V
● ID =-10 A (VGS =-10V)
● RDS(ON) ＜ 14 mΩ (VGS =-4.5V)
● RDS(ON) ＜ 20mΩ (VGS =-2.5V)
● Diode Exhibits High Speed, Soft Recovery
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 70℃
Maximum Operating Drain Current
Pulsed Drain Current (Note.1)
Power Dissipation
Ta = 25℃
Maximum Operating Power Dissipation
Avalanche Energy (Note.2)
TJ = 25°C
Thermal Resistance.Junction- to-Ambient
Junction Temperature
Lead Temperature for Soldering Purposes
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
RthJA
TJ
TL
Tstg
10 seconds
steady state
-20
±12
-10 -8.8
-8 -6.4
-5.5 -4.5
-50 -44
2.5 1.6
0.6 0.4
500
50 80
150
260
-55 to 150
Note.1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2%.
Note.2: VDD=−20 V, VGS =−4.5V, Peak IL =5A, L = 40 mH, RG = 25Ω
Unit
V
A
W
mJ
℃/W
℃
1 page  
NTMS10P02R2
P-Channel MOSFET
■ Typical Characterisitics
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 13. Diode Reverse Recovery Waveform
TYPICAL ELECTRICAL CHARACTERISTICS
10
1.0
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
1.0E−05 1.0E−04
Chip 0.0163
Normalized toja at 10s.
0.0652 0.1988 0.6411 0.9502
0.0307 F 0.1668 F 0.5541 F 1.9437 F 72.416 FAmbient
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
Figure 14. Thermal Response
1.0E+01 1.0E+02 1.0E+03
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet NTMS10P02R2.PDF ] | |
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