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PDF SBB1089Z Data sheet ( Hoja de datos )
| Número de pieza | SBB1089Z | |
| Descripción | CASCADABLE | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SBB1089Z
50MHz to 850MHz,
CASCADABLE
Package: SOT-89
Product Description
RFMD’s SBB1089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB1089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB1089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
35
25
S21
S11
S21
S22
15
5
-5
S11
-15
-25
-35
50
S22
150 250 350 450 550 650 750 850
Frequency (MHz)
Features
OIP3=43.1dBm at 240MHz
P1dB=19.6dBm at 500MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite
Terminals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
15.5
dB 70MHz
14.0
15.5
17.0 dB 240MHz
14.0
15.5
17.0 dB 400MHz
Output Power at 1dB Compression
19.0
dBm
70 MHz
19.0
dBm
240 MHz
18.0
19.0
dBm
400 MHz
Third Order Intercept Point
42.0
dBm
70 MHz
43.0
dBm
240 MHz
38.5
40.5
dBm
400 MHz
Return Loss
50 to 850
MHz Minimum 10dB
Input Return Loss
14.0
18.0
dB 70MHz to 5000MHz
Output Return Loss
12.0
16.0
dB 70MHz to 5000MHz
Noise Figure
3.5 4.2 dB 500MHz
Reverse Isolation
18.0
dB 70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0 5.3 V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: VD=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, Tested with Bias Tees
DS130717
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 8
1 page  
SBB1089Z
240MHz Application Circuit S-Parameters over Temperature
S11 versus Frequency
-5
-10
-15
-20
-25
-30
50
-40°C
25°C
85°C
150 250 350 450 550 650 750 850
Frequency (GHz)
S12 versus Frequency
-5
-10
-15
-20
-25
-30
-35
50
-40°C
25°C
85°C
150 250 350 450 550 650 750 850
Frequency (GHz)
Current versus Voltage Over Temperature
(App. Ckt.)
120
100
80
60
40
20
-40C
25C
85C
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Voltage (V)
S21 versus Frequency
25
20
15
10
5 -40°C
25°C
85°C
0
50 150 250 350 450 550 650 750 850
Frequency (GHz)
S22 versus Frequency
-5
-10
-15
-20
-25
-30
50
-40°C
25°C
85°C
150 250 350 450 550 650 750 850
Frequency (GHz)
DS130717
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 8
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SBB1089Z.PDF ] | |
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