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PDF SBB2089Z Data sheet ( Hoja de datos )
| Número de pieza | SBB2089Z | |
| Descripción | CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER | |
| Fabricantes | RFMD | |
| Logotipo |  |
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SBB2089Z
50MHz to 850MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB2089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB2089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB2089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Gain and Return Loss versus Frequency
(w/ App. Ckt.)
30.0
20.0
10.0
S21
0.0
-10.0
-20.0
S11
-30.0
-40.0 S22
S11
S21
S22
-50.0
50.0 150.0 250.0 350.0 450.0 550.0 650.0 750.0 850.0
Frequency (MHz)
Features
OIP3=42.8dBm at 240MHz
P1dB=20.8dBm at 500MHz
Single Fixed 5V Supply
Robust 2000V ESD, Class 2
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
Receiver IF Amplifier
Cellular, PCS, GSM, UMTS
Wireless Data, Satellite Termi-
nals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
20.0
dB 70MHz
18.5
20.0
21.5 dB 240MHz
18.5
20.0
21.5 dB 400MHz
Output Power at 1dB Compression
20.0
dBm
70 MHz
20.0
dBm
240 MHz
18.5
21.0
dBm
400 MHz
Third Order Intercept Point
41.0
dBm
70 MHz
43.0
dBm
240 MHz
39.0
41.0
dBm
400 MHz
Return Loss
50 to 850
MHz Minimum 10dB
Input Return Loss
15.0
20.0
dB 70MHz to 5000MHz
Output Return Loss
11.0
14.0
dB 70MHz to 5000MHz
Noise Figure
2.7 3.7 dB 500MHz
Reverse Isolation
22.0
dB 70MHz to 5000MHz
Thermal Resistance
48.8
°C/W
junction - lead
Device Operating Voltage
5.0 5.3 V
Device Operating Current
82.0
90.0
98.0
mA
Test Conditions: VD=5V, ID=90mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=0dBm, TL=25°C, ZS=ZL=50, Tested with Bias Tees
DS130718
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 7
1 page  
SBB2089Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/BIAS
Description
RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation.
Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possi-
ble.
RF output and bias pin. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper oper-
ation.
Suggested PCB Pad Layout
Preliminary
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 7
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SBB2089Z.PDF ] | |
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