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Número de pieza SBB5089Z
Descripción CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Fabricantes RFMD 
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SBB5089Z
50MHz to 6000MHz, CASCADABLE
ACTIVE BIAS InGaP HBT MMIC AMPLIFIER
Package: SOT-89
Product Description
RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. Designed to run directly from a 5V supply, the SBB5089Z does
not require a dropping resistor as compared to typical Darlington amplifi-
ers. The SBB5089Z product is designed for high linearity 5V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain and Return Loss versus Frequency
(with BiasTees)
30.0
20.0
10.0
0.0
-10.0
-20.0
25C
-30.0
25C
-40.0
25C
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
Features
Wideband Flat Gain to 4GHz:
±1.1 dB
P1dB=20.4dBm at 1950MHz
Single Fixed 5V Supply
Robust 1000V ESD, Class 1C
Patented Thermal Design and
Bias Circuit
Low Thermal Resistance
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
Wideband Intrumentation
Wireless Data, Satellite Termi-
nals
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Small Signal Gain
19.0
20.5
22.0
dB 850MHz
18.5
20.0
21.5 dB 1950MHz
14.5
16.0
17.5 dB 6000MHz
Output Power at 1dB Compression
20.5
dBm
850 MHz
19.0
20.5
dBm
1950 MHz
Third Order Intercept Point
38.5
dBm
850 MHz
33.0
35.0
dBm
1950 MHz
Bandwidth
3000
MHz Min. 10dB return loss (typ.)
Input Return Loss
10.0
14.0
dB 1950MHz
Output Return Loss
10.0
14.0
dB 1950MHz
Reverse Isolation
23.3
dB 1950MHz
Noise Figure
4.2 4.9 dB 1950MHz
Device Operating Voltage
5.0
5.25
V
Device Operating Current
65.0
75.0
92.0
mA
Thermal Resistance
69.9
°C/W
junction - lead
Test Conditions: VD=5V, ID=75mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-dBm, TL=25°C, ZS=ZL=50Tested with Bias Tees
DS130718
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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SBB5089Z pdf
SBB5089Z
0.5GHz to 3.5GHz Application Circuit S-Parameters Over Temperature
S11 versus Frequency
S21 versus Frequency
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
-35.0
25C
-40C
85C
-40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
25.0
20.0
15.0
10.0
5.0 25C
-40C
85C
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
S12 versus Frequency
S22 versus Frequency
0.0
-5.0
-10.0
25C
-40C
85C
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Id vs. Temperature (App. Ckt.)
84.0
0.0
-5.0
-10.0
25C
-40C
85C
-15.0
-20.0
-25.0
-30.0
-35.0
-40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Frequency (GHz)
Current versus Voltage Over Temperature
(Application Circuit)
105.0
82.0
95.0
85.0
80.0
78.0
-40.0 -20.0
0.0
20.0
40.0
60.0
80.0
Temperature
75.0
65.0 25C
-40C
85C
55.0
4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5
Voltage (V)
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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