HZU20 PDF даташит
Спецификация HZU20 изготовлена «Renesas Technology» и имеет функцию, называемую «Silicon Epitaxial Planar Zener Diodes». |
|
Детали детали
Номер произв | HZU20 |
Описание | Silicon Epitaxial Planar Zener Diodes |
Производители | Renesas Technology |
логотип |
7 Pages
No Preview Available ! |
HZU Series
Silicon Planar Zener Diode for Stabilizer
Features
• These diodes are delivered taped.
• Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No.
HZU Series
Laser Mark
Let to Mark Code
Package Name
URP
Pin Arrangement
Cathode mark
Mark
1 2•0 2
1. Cathode
2. Anode
REJ03G0625-0900
Rev.9.00
Jul 06, 2006
Package Code
PTSP0002ZA-A
Rev.9.00 Jul 06, 2006 page 1 of 7
No Preview Available ! |
HZU Series
Absolute Maximum Ratings
Item
Power dissipation
Junction temperature
Storage temperature
Note: 1. With P.C. Board.
Pd *1
Tj
Tstg
Symbol
Value
200
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Type
HZU2.0
Grade
B
VZ (V)*1
Min Max
1.90 2.20
Test
Condition
IZ (mA)
5
HZU2.2 B 2.10 2.40
5
HZU2.4 B 2.30 2.60
5
HZU2.7 B 2.50 2.90
5
B1 2.50 2.75
B2 2.65 2.90
HZU3.0 B 2.80 3.20
5
B1 2.80 3.05
B2 2.95 3.20
HZU3.3 B 3.10 3.50
5
B1 3.10 3.35
B2 3.25 3.50
HZU3.6 B 3.40 3.80
5
B1 3.40 3.65
B2 3.55 3.80
HZU3.9 B 3.70 4.10
5
B1 3.70 3.97
B2 3.87 4.10
HZU4.3 B 4.01 4.48
5
B1 4.01 4.21
B2 4.15 4.34
B3 4.28 4.48
HZU4.7 B 4.42 4.90
5
B1 4.42 4.61
B2 4.55 4.75
B3 4.69 4.90
HZU5.1 B 4.84 5.37
5
B1 4.84 5.04
B2 4.98 5.20
B3 5.14 5.37
HZU5.6 B 5.31 5.92
5
B1 5.31 5.55
B2 5.49 5.73
B3 5.67 5.92
Note: 1. Tested with pulse (PW = 40 ms)
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
120 0.5
120 0.7
120 1.0
120 1.0
50 1.0
20 1.0
10 1.0
10 1.0
10 1.0
10 1.0
5 1.5
5 2.5
(Ta = 25°C)
Dynamic Resistance
rd (Ω)
Max
100
Test
Condition
IZ (mA)
5
100 5
100 5
110 5
120 5
130 5
130 5
130 5
130 5
130 5
130 5
80 5
Rev.9.00 Jul 06, 2006 page 2 of 7
No Preview Available ! |
HZU Series
Zener Voltage
Type
HZU6.2
Grade
B
VZ (V)*1
Min Max
5.86 6.53
Test
Condition
IZ (mA)
5
B1 5.86 6.12
B2 6.06 6.33
B3 6.26 6.53
HZU6.8
B 6.47 7.14
5
B1 6.47 6.73
B2 6.65 6.93
B3 6.86 7.14
HZU7.5
B 7.06 7.84
5
B1 7.06 7.36
B2 7.28 7.60
B3 7.52 7.84
HZU8.2
B 7.76 8.64
5
B1 7.76 8.10
B2 8.02 8.36
B3 8.28 8.64
HZU9.1
B 8.56 9.55
5
B1 8.56 8.93
B2 8.85 9.23
B3 9.15 9.55
HZU10
B 9.45 10.55
5
B1 9.45 9.87
B2 9.77 10.21
B3
10.11
10.55
HZU11
B
10.44
11.56
5
B1
10.44
10.88
B2
10.76
11.22
B3
11.10
11.56
HZU12
B
11.42
12.60
5
B1
11.42
11.90
B2
11.74
12.24
B3
12.08
12.60
HZU13
B
12.47
13.96
5
B1
12.47
13.03
B2
12.91
13.49
B3
13.37
13.96
HZU15
B
13.84
15.52
5
B1
13.84
14.46
B2
14.34
14.98
B3
14.85
15.52
HZU16
B
15.37
17.09
5
B1
15.37
16.01
B2
15.58
16.51
B3
16.35
17.09
HZU18
B
16.94
19.03
5
B1
16.94
17.70
B2
17.56
18.35
B3
18.21
19.03
Note: 1. Tested with pulse (PW = 40 ms)
Reverse Current
IR (µA)
Test
Condition
Max
VR (V)
2 3.0
2 3.5
2 4.0
2 5.0
2 6.0
2 7.0
2 8.0
2 9.0
2 10.0
2 11.0
2 12.0
2 13.0
Dynamic Resistance
rd (Ω)
Test
Condition
Max
IZ (mA)
50 5
30 5
30 5
30 5
30 5
30 5
30 5
35 5
35 5
40 5
40 5
45 5
Rev.9.00 Jul 06, 2006 page 3 of 7
Скачать PDF:
[ HZU20.PDF Даташит ]
Номер в каталоге | Описание | Производители |
HZU2.0 | Silicon Epitaxial Planar Zener Diodes | Renesas Technology |
HZU2.2 | Silicon Epitaxial Planar Zener Diodes | Renesas Technology |
HZU2.4 | Silicon Epitaxial Planar Zener Diodes | Renesas Technology |
HZU2.7 | Silicon Epitaxial Planar Zener Diodes | Renesas Technology |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |