![]() |
|
Número de pieza | HFF11N60S | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | HUASHAN ELECTRONIC | |
Logotipo | ![]() |
|
Hay una vista previa y un enlace de descarga de HFF11N60S (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available !
Shantou Huashan Electronic Devices Co., Ltd.
HFF11N60S
N-Channel Enhancement Mode Field Effect Transistor
█ General Description
These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been
especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation
mode . These devices are well suited for high efficiency switch mode power supply,
power factor correction, electronic lamp ballast based on half bridge.
█ Features
• 10.8A, 600V(See Note), RDS(on) <0.75Ω@VGS = 10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
█ Maximum Ratings(Ta=25℃ unless otherwise specified)
TO-220F
1
1- G 2-D 3-S
Tstg——Storage Temperature ------------------------------------------------------ -55~150℃
Tj ——Operating Junction Temperature -------------------------------------------------- 150℃
VDSS —— Drain-Source Voltage ----------------------------------------------------------600V
VGSS —— Gate-Source Voltage --------------------------------------------------------------------------- ±30V
ID —— Drain Current (Continuous)(Tc=25℃)--------------------------------------------------------- 10.8A
IDM —— Pulsed Drain Current (Note 1)----------------------------------------------------------------- 32.4A
PD —— Maximum Power Dissipation (Tc=25℃)------------------------------------------------------ 32.1W
Derate Above 25℃ ------------------------------------------------------------------------- 0.26W/℃
EAS—— Pulsed Avalanche Energy (Note 2) --------------------------------------------------------- 201.7mJ
IAR—— Avalanche Current (Note 1) ----------------------------------------------------------------------- 3.7A
EAR —— Repetitive Avalanche Energy (Note 1) ----------------------------------------------------- 0.94mJ
dv/dt —— Peak Diode Recovery dv/dt (Note 3) ------------------------------------------------------20V/ns
█ Thermal Characteristics
Symbol
Rthj-case
Rthj-amb
Items
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
TO-220F
Max 3.9
Max 62.5
Unit
℃/W
℃/W
1 page ![]() ![]() Shantou Huashan Electronic Devices Co., Ltd.
HFF11N60S
█ Typical Characteristics
5 Page ![]() |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet HFF11N60S.PDF ] |
Número de pieza | Descripción | Fabricantes |
HFF11N60S | N-Channel Enhancement Mode Field Effect Transistor | ![]() HUASHAN ELECTRONIC |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
![]() Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
![]() Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |