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GLT625608-70J3 PDF даташит

Спецификация GLT625608-70J3 изготовлена ​​​​«ETC» и имеет функцию, называемую «32K x 8 SLOW SPEED CMOS STATIC RAM».

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Номер произв GLT625608-70J3
Описание 32K x 8 SLOW SPEED CMOS STATIC RAM
Производители ETC
логотип ETC логотип 

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GLT625608-70J3 Даташит, Описание, Даташиты
G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Features :
Description :
Available in 70/100ns(MAX.)
GLT625608 is a 262,144-bit static random access
Automatic power-down when chip disabled memory organized as 32,768 words by 8 bits and
Low power consumption:
operates from a single 5 volt supply. Inputs and
GLT625608
three-state outputs are TTL compatible and allow for
-467.5mW(Max.) Operating
direct interfacing with system I/O bus. The
-500µW(Max.)Standby
TTL compatible interface levels
GLT625608 is available in a standard 330 mil SOP
packages. Other packages will also available upon
request.
Single 5V power supply
Fully static operation
Three state outputs
256K bit EPROM pin compatible
Data Retention as low as 2V
Industrial Grade (-40°C~85°C) available.
Pin Configurations:
GLT625608
Function Block Diagram :
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-1-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.









No Preview Available !

GLT625608-70J3 Даташит, Описание, Даташиты
G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Pin Descriptions:
Name
A0 - A14
WE
OE
CE
I/O0-I/O7
Vcc
GND
Truth Table:
Mode
Not Selected
( Power down )
Output Disabled
Read
Write
NOTE: X : H or L
Function
Address Inputs
Write Enable
Output Enable
Chip Enable
Data Input/Output
Power Supply (+5V)
Ground
WE CE OE I/O Operation Supply Current
XHX
High Z
ISB,ISB1
High Z
ISB,ISB1
HLH
High Z
ICC
HL L
DOUT
ICC
LLX
DIN
ICC
Absolute Maximum Ratings:
Ambient Temperature
Under Bias...................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +125°C
Voltage Relative to GND.............-0.5V to + 7.0V
Data Output Current..................................50mA
Power Dissipation......................................1.0W
1.Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Operation Range :
RANGE
AMBIENT
TEMPERATURE
Commercial 0°C to + 70°C
Industrial
-40°C to 85°C
Vcc
5V ± 10%
5V ± 10%
Capaccitance(1)(TA=25°C,F=1.0MHZ)
SYMBOL
PARAMETER
CONDIT
IONS
MAX.
Input
CIN Capacitance VIN=0V 6
CDQ
Input/Output
capacitance
VI/O=0
8
1.This parameter is guaranteed and tested.
UNIT
pF
pF
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-2-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.









No Preview Available !

GLT625608-70J3 Даташит, Описание, Даташиты
G-LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
DC Characteristics
Sym.
Parameter
Test Conditions
Min. Typ(1)
Max.
Unit
VIL Guaranteed Input Low
Voltage (2)(3)
-0.3 -
+0.8
V
VIH Guaranteed Input High
Voltage (2)
2.2 -
VCC+0.3
V
ILI Input Leakage Current VCC=Max., VIN=0V to VCC -5 -
5 µA
ILO Output Leakage Current VCC=Max., CE VIH
-5 -
5 µA
VOL Output Low Voltage
VCC=Min.,IOL =8mA
--
0.4 V
VOH Output High Voltage
VCC=Min., IOH =-4mA
2.4 -
-
V
ICC
Operating Power Supply
Current
VCC=Max., CE VIL,
II/O=0mA., F=Fmax(3)
--
100
mA
ICCSB Standby Power Supply
Current
VCC=Max., CE VIH,
II/O=0mA., F=Fmax(3)
--
20
mA
ICCSB1 Power Down Power
Supply Current
VCC=Max., CE VCC.-0.2V,
VINVCC. -0.2V or
-
10
10
mA
1. Typical characteristics are at VCC=5V, TA=25°C.
2. These are absolute values with repeat to device ground and all overshoots due to system or
tester noise are included.
3. FMAX=1/tRC.
Data Retention
Sym.
Parameter
Test Conditions
VDR VCC for Data retention CE VCC -0.2V
VIN VCC -0.2V or VIN 0.2V
ICCDR Data Retention
CE VDR - 0.2V
Current
VIN VDR - 0.2V or VIN 0.2V
tCDR Chip Deselect to Data
Retention Time
See Retention Waveform
tR Operating Recovery
Time
1. VDR = 3V, TA = Specified
2. tRC = Read Cycle Time
Min. Typ Max. Unit
2.0 - - V
-2
0-
tRC(2) -
50 µA(1)
)
- ns
- ns
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
-3-
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.










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