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GM71C17800CLJ-5 PDF даташит

Спецификация GM71C17800CLJ-5 изготовлена ​​​​«Hynix Semiconductor» и имеет функцию, называемую «2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM».

Детали детали

Номер произв GM71C17800CLJ-5
Описание 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
Производители Hynix Semiconductor
логотип Hynix Semiconductor логотип 

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GM71C17800CLJ-5 Даташит, Описание, Даташиты
Description
The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.
Pin Configuration
GM71C17800C
GM71CS17800CL
2,097,152 WORDS x 8 BIT
CMOS DYNAMIC RAM
Features
* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6
GM71C(S)17800C/CL-7
t tRAC CAC
50 13
60 15
70 18
tRC
90
110
130
tPC
35
40
45
* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)
0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)
28 SOJ
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
28 TSOP II
VSS 1
I/O0 2
I/O1 3
I/O2 4
I/O3 5
WE 6
RAS 7
NC 8
A10 9
A0 10
A1 11
A2 12
A3 13
VCC 14
28 VSS
27 I/O7
26 I/O6
25 I/O5
24 I/O4
23 CAS
22 OE
21 A9
20 A8
19 A7
18 A6
17 A5
16 A4
15 VSS
(Top View)
Rev 0.1 / Apr’01









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GM71C17800CLJ-5 Даташит, Описание, Даташиты
Pin Description
Pin
A0-A10
A0-A10
I/O0-I/O7
RAS
CAS
Function
Address Inputs
Refresh Address Inputs
Data-In/Out
Row Address Strobe
Column Address Strobe
Pin
WE
OE
VCC
VSS
NC
Ordering Information
Type No.
GM71C(S)17800CJ/CLJ -5
GM71C(S)17800CJ/CLJ -6
GM71C(S)17800CJ/CLJ -7
GM71C(S)17800CT/CLT -5
GM71C(S)17800CT/CLT -6
GM71C(S)17800CT/CLT -7
Access Time
50ns
60ns
70ns
50ns
60ns
70ns
GM71C17800C
GM71CS17800CL
Function
Read/Write Enable
Output Enable
Power (+5V)
Ground
No Connection
Package
400 Mil
28 Pin
Plastic SOJ
400 Mil
28 Pin
Plastic TSOP II
Absolute Maximum Ratings*
Symbol
TA
TSTG
VIN/OUT
VCC
IOUT
PT
Parameter
Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to VSS
Voltage on VCC Relative to VSS
Short Circuit Output Current
Power Dissipation
Rating
0 ~ +70
-55 ~ +125
-1.0 ~ +7.0V
-1.0 ~ +7.0V
50
1.0
Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.
Unit
C
C
V
V
mA
W
Recommended DC Operating Conditions (TA = 0 ~ +70C)
Symbol
Parameter
VCC Supply Voltage
VIH Input High Voltage
VIL Input Low Voltage
Note: All voltage referred to Vss.
Min Typ
4.5 5.0
2.4 -
-1.0 -
Max
5.5
6.0
0.8
Unit
V
V
V
Rev 0.1 / Apr’01









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GM71C17800CLJ-5 Даташит, Описание, Даташиты
GM71C17800C
GM71CS17800CL
DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)
Symbol
VOH
VOL
ICC1
Parameter
Output Level
Output "H" Level Voltage (IOUT = -5mA)
Output Level
Output "L" Level Voltage (IOUT = 4.2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling: tRC = tRC min)
ICC2 Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
ICC3 RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
ICC4 Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(tPC = tPC min)
Min Max Unit Note
2.4 VCC
V
50ns
60ns
70ns
0
-
-
-
0.4 V
110
100 mA 1, 2
90
50ns
60ns
70ns
50ns
60ns
70ns
-
-
-
-
-
-
-
2 mA
110
100 mA
90
2
100
90 mA 1, 3
85
ICC5 Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, Dout = High-Z)
ICC6 CAS-before-RAS Refresh Current
(tRC = tRC min)
ICC7 Battery Back Up Operating Current
(Standby with CBR Refresh)
(tRC=62.5us, tRAS<=0.3us, DOUT=High-Z)
ICC8 Standby Current RAS = VIH
CAS = VIL
DOUT = Enable
-
-
50ns -
60ns -
70ns -
1 mA
150 uA
110
100 mA
90
5
- 500 uA 4,5
- 5 mA 1
ICC9 Self-Refresh Mode Current
(RAS, CAS<=0.2V, DOUT=High-Z)
- 300 uA 5
IL(I) Input Leakage Current
Any Input (0V<=VIN<= 6V)
IL(O) Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L-version.
-10 10 uA
-10 10 uA
Rev 0.1 / Apr’01










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