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Número de pieza | GN01100B | |
Descripción | GaAs IC (with built-in ferroelectric) | |
Fabricantes | Panasonic Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GN01100B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! GaAs MMIC
GN01100B
GaAs IC (with built-in ferroelectric)
For the preamplifier of the transmitting section in a cellular phone
Other communication equipment
0.2±0.05
654
Unit: mm
0.12
+0.05
−0.02
s Features
• Super miniature S-Mini 6-pin package (2125 size)
• Transmitter amplifier : Wide dynamic range on low operation current
: Gain control function built-in
s Absolute Maximum Ratings Ta=25 °C
Parameter
Symbol Ratings
Power supply voltage
Circuit current
Gate control voltage
Max input power
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDD
IDD
VAGC
PIN
PD
Topr
Tstg
5
80
0 to 3
−5
150
−30 to +90
−40 to +120
Unit
V
mA
V
dBm
mW
°C
°C
R0.2
1
2
3
0.65 0.65
2.0±0.1
6 - 0° to 10°
EIAJ : SC-88
1 : RFIN
4 : VDD2
2 : VDD1
5 : GND
3 : VAGC
6 : VREF
S Mini Type Package (6-pin)
Marking Symbol : HU
s Electrical Characteristics VDD1=VDD2=3.0 V, f=906 MHz, Ta=25 °C±3 °C
Parameter
Circuit current *1
Power gain 1 *1
Power gain 2 *1
Dynamic range
Gain control sensitivity *1, 2
Adjacent channel leakage
power (ACP) 1 *1, 3
Adjacent channel leakage
power (ACP) 1 *1, 3
Symbol
IDD
PG1
PG2
DR
GS
ACP1
ACP2
Conditions
min typ max Unit
VAGC=2.0 V, PIN=−20 dBm
VAGC=2.0 V, PIN=−20 dBm
VAGC=0.5 V, PIN=−20 dBm
PG1−PG2
37 45
20 23
−10 −5
30 34
mA
dB
dB
dB
Pin=−20 dBm
25 49 90 dB/V
VAGC=2.0 V, POUT=5 dBm
IS-95 modulation, 900 kHz Detuning
30 kHz Bandwidth
−54 −50 dBc
VAGC=2.0 V, Pout=5 dBm
IS-95 modulation, 1.98 MHz Detuning
30 kHz Bandwidth
−74 −65 dBc
Note) *1 : Refer to measurement circuit.
*2 : {PG(VAGC=1.6V)[dB]−PG(VAGC=1.2V)[dB]/0.4[V]
*3 : Design-guaranteed items.
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet GN01100B.PDF ] |
Número de pieza | Descripción | Fabricantes |
GN01100B | GaAs IC (with built-in ferroelectric) | Panasonic Semiconductor |
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