DataSheet26.com

GN2A PDF даташит

Спецификация GN2A изготовлена ​​​​«EIC discrete Semiconductors» и имеет функцию, называемую «GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT».

Детали детали

Номер произв GN2A
Описание GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 

2 Pages
scroll

No Preview Available !

GN2A Даташит, Описание, Даташиты
GN2A - GN2M
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMB (DO-214AA)
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
1.1 ±0.3
2.0 ±0.1
3.6 ±0.15
2.3 ±0.2
0.22 ±0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.093 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL GN2A GN2B GN2D GN2G GN2J GN2K GN2M UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 2.0 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
VRRM 50 100 200 400 600 800 1000 Volts
VRMS
35
70 140 280 420 560 700 Volts
VDC 50 100 200 400 600 800 1000 Volts
IF(AV)
2.0 Amps.
IFSM
VF
IR
IR(H)
CJ
TJ
TSTG
50
1.0
5.0
50
75
- 65 to + 150
- 65 to + 150
Amps.
Volts
µA
µA
pF
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
UPDATE : MAY 27, 1998









No Preview Available !

GN2A Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES ( GN2A - GN2M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
1.6
1.2
0.8
0.4
RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125
150
AMBIENT TEMPERATURE, ( °C)
175
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
30
20 Ta = 50 °C
10 8.3 ms SINGLE HALF SINE WAVE
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
100
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
1.0
Pulse Width = 300 µs
2% Duty Cycle
0.1
TJ = 25 °C
0.01
0.4
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)










Скачать PDF:

[ GN2A.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
GN20GN Package XX-Lead Plastic SSOPETC
ETC
GN2011GaAs N-Channel MES ICPanasonic
Panasonic
GN2012GaAs MMICPanasonic
Panasonic
GN2470INSULATED GATE BIPOLAR TRANSISTORSupertex
Supertex

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск