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Datasheet GN2B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | GN2B | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMB (DO-214AA)
1.1
±0.3
±
±
2.0
±0.1 ±0.15
2.3
0.22
±0.07
| EIC discrete Semiconductors | data |
GN2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | GN20 | GN Package XX-Lead Plastic SSOP ( )
GN Package 16-Lead Plastic SSOP (Narrow .150 Inch)
(Reference LTC DWG # 05-08-1641)
.045 ± .005
.189 – .196* (4.801 – 4.978) 16 15 14 13 12 11 10 9
.009 (0.229) REF
.254 MIN
.150 – .165
.229 – .244 (5.817 – 6.198)
.0165 ± .0015
.150 – .157** ( ETC data | | |
2 | GN2011 | GaAs N-Channel MES IC ( )
Panasonic data | | |
3 | GN2012 | GaAs MMIC 377
保 守保守
予
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+ −
GN2012
± ±
±
± ±
GN2012
378
– – – – – Panasonic data | | |
4 | GN2470 | INSULATED GATE BIPOLAR TRANSISTOR Insulated Gate Bipolar Transistor
Features
► Low voltage drop at high currents ► Industry standard TO-252 (D-Pak) package ► 700V breakdown voltage rating
GN2470 IGBT
General Description
The Supertex GN2470 is a 700V, 3.5amp insulated gate bipolar transistor (IGBT) that combines the positive Supertex transistor | | |
5 | GN25L95 | 2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier GN25L95
2.5 Gbps CMOS Burst Mode Laser Driver & Limiting Post Amplifier with On-Chip Digital Diagnostic Monitoring
Main Features
• • • • • • • • • • 100 mA bias current and 90 mA modulation current output drive capability On-chip Digital Diagnostic Monitoring (DDMI) Automatic Me Semtech amplifier | | |
6 | GN2A | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMB (DO-214AA)
1.1
±0.3
±
±
2.0
±0.1 ±0.15
2.3
0.22
±0.07
EIC discrete Semiconductors data | | |
7 | GN2B | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT GN2A - GN2M
PRV : 50 - 1000 Volts Io : 2.0 Amperes
FEATURES :
* * * * * Glass passivated chip High current capability High reliability Low reverse current Low forward voltage drop
GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT
SMB (DO-214AA)
1.1
±0.3
±
±
2.0
±0.1 ±0.15
2.3
0.22
±0.07
EIC discrete Semiconductors data | |
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Número de pieza | Descripción | Fabricantes | |
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