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GP1200ESM33 PDF даташит

Спецификация GP1200ESM33 изготовлена ​​​​«Dynex Semiconductor» и имеет функцию, называемую «High Reliability Single Switch IGBT Module Advance Information».

Детали детали

Номер произв GP1200ESM33
Описание High Reliability Single Switch IGBT Module Advance Information
Производители Dynex Semiconductor
логотип Dynex Semiconductor логотип 

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GP1200ESM33 Даташит, Описание, Даташиты
GP1200ESM33
Replaces July 2000 version, DS5308-1.6
FEATURES
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP1200ESM33
High Reliability Single Switch IGBT Module
Advance Information
DS5308-2.1 February 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.4V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
Aux C
External connection
C1 C2
C3
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
G
Aux E
E1 E2
External connection
E3
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As:
GP1200ESM33
Note: When ordering, please use the whole part number.
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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GP1200ESM33 Даташит, Описание, Даташиты
GP1200ESM33
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25˚C unless stated otherwise
Symbol
Parameter
Test Conditions
V
CES
VGES
IC
IC(PK)
P
max
Visol
Collector-emitter voltage
Gate-emitter voltage
V = 0V
GE
-
Continuous collector current
T = 80˚C
case
Peak collector current
1ms, Tcase = 120˚C
Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C
Isolation voltage
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
Max. Units
3300 V
±20 V
1200 A
2400 A
14.7 kW
6000 V
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance - transistor
Continuous dissipation -
junction to case
Rth(j-c)
Thermal resistance - diode
Continuous dissipation -
junction to case
Rth(c-h)
Thermal resistance - case to heatsink (per module) Mounting torque 5Nm
(with mounting grease)
Tj Junction temperature
Transistor
Diode
Tstg Storage temperature range
- Screw torque
-
Mounting - M6
Electrical connections - M4
Electrical connections - M8
Min. Max. Units
- 8.5 ˚C/kW
- 16.3 ˚C/kW
- 4 ˚C/kW
- 125 ˚C
- 125 ˚C
–40 125 ˚C
- 5 Nm
- 2 Nm
- 10 Nm
2/9 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com









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GP1200ESM33 Даташит, Описание, Даташиты
GP1200ESM33
ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise.
case
Symbol
Parameter
ICES Collector cut-off current
IGES
VGE(TH)
VCE(sat)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
IF Diode forward current
IFM Diode maximum forward current
VF Diode forward voltage
Cies Input capacitance
LM Module inductance
Test Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
VGE = 0V, VCE = VCES, Tcase = 125˚C
VGE = ±20V, VCE = 0V
I = 120mA, V = V
C GE CE
VGE = 15V, IC = 1200A
VGE = 15V, IC = 1200A, , Tcase = 125˚C
DC
-
-
-
4.5
-
-
-
- 3 mA
- 100 mA
- 12 µA
5.5 6.5 V
3.4 4.3 V
4.3 5 V
- 1200 A
t = 1ms
p
IF = 1200A
IF = 1200A, Tcase = 125˚C
VCE = 25V, VGE = 0V, f = 1MHz
-
- - 2400 A
- 2.3 2.9 V
- 2.4 3 V
- 300 - nF
- 10 - nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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Номер в каталогеОписаниеПроизводители
GP1200ESM33High Reliability Single Switch IGBT Module Advance InformationDynex Semiconductor
Dynex Semiconductor

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