|
|
PDF GP1201FSS18 Data sheet ( Hoja de datos )
| Número de pieza | GP1201FSS18 | |
| Descripción | Single Switch Low V IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GP1201FSS18 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
GP1201FSS18
GP1201FSS18
Single Switch Low VCE(SAT) IGBT Module
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 1200A Per Module
DS5411-1.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
1200A
2400A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP1201FSS18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1201FSS18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
Aux E
E1
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/9
1 page  
GP1201FSS18
TYPICAL CHARACTERISTICS
2400
Common emitter
2200 Tcase = 25˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0
Collector-emitter voltage, Vce - (V)
5.0
Fig. 3 Typical output characteristics
2400
Common emitter
2200 Tcase = 125˚C
2000
Vge = 20/15/12/10V
1800
1600
1400
1200
1000
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
6.0
Fig. 4 Typical output characteristics
1.2
Tcase = 125˚C
1.1 VGE = 15V
1.0
VCE = 900V
RG = 2.2Ω
L = 50nH
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0 200 400 600 800
Collector current, IC - (A)
EOFF
EON
EREC
1000 1200
Fig. 5 Typical switching energy vs collector current
3.2
Tcase = 125˚C
2.8
VGE = 15V
VCE = 900V
IC = 1200A
L = 50nH
2.4
EON
2.0
1.6
EOFF
1.2
0.8
0.4
EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GP1201FSS18.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GP1201FSS18 | Single Switch Low V IGBT Module | Dynex Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |