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PDF GP1600FSM18 Data sheet ( Hoja de datos )
| Número de pieza | GP1600FSM18 | |
| Descripción | Hi-Reliability Single Switch IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP1600FSM18
Replaces May 2000 version, DS5361-1.1
FEATURES
s High Thermal Cycling Capability
s 1600A Per Module
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
GP1600FSM18
Hi-Reliability Single Switch IGBT Module
DS5361-2.3 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
1600A
3200A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP1600FSM18 is a single switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications. This
device is optimised for traction drives and other applications
requiring high thermal cycling capability or very high reliability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP1600FSM18
Note: When ordering, please use the whole part number.
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
Aux C
E1
Aux E
C1
G
E2 C2
Outline type code: F
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP1600FSM18
TYPICAL CHARACTERISTICS
3200
2800
Common emitter
Tcase = 25˚C
Vge = 20/15/12V
2400
2000
Vge = 10V
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
3200
2800
Common emitter
Tcase = 125˚C
Vge = 20/15/12V
2400
2000
Vge = 10V
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
700
Tcase = 125˚C
VGE = ±15V
600 VCE = 900V
Rg = 2.2Ω
500
400
300
200
EOFF
EON
EREC
100
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, IC - (A)
Fig. 5 Typical switching energy vs collector current
1800
1600
1400
Tcase = 125˚C
VGE = ±15V
VCE = 900V
IT = 1600A
EON
1200
1000
800
EOFF
600
400
EREC
200
0
0 1 2 3 4 5 6 7 8 9 10
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| PDF Descargar | [ Datasheet GP1600FSM18.PDF ] | |
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