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GP1S28 PDF даташит

Спецификация GP1S28 изготовлена ​​​​«Sharp Electrionic Components» и имеет функцию, называемую «Subminiature Photointerrupter».

Детали детали

Номер произв GP1S28
Описание Subminiature Photointerrupter
Производители Sharp Electrionic Components
логотип Sharp Electrionic Components логотип 

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GP1S28 Даташит, Описание, Даташиты
GP1S28
GP1S28
Subminiature Photointerrupter
s Features
1. Ultra-compact
2. PWB mounting type package
3. High sensing accuracy ( Slit width 0.3mm )
4. With mounting boss
s Applications
1. Cameras
2. Floppy disk drives
s Outline Dimensions
(Unit : mm )
Internal connection diagram
32
4.0
+
-
0.05
0.15
0.7 1.41.2
Center of light path
41
1 Anode
2 Cathode
3 Emitter
4 Collector
(C0.8)
4.0 (Detector)
(0.3)
Slit width
s Absolute Maximum Ratings
Input
Output
Parameter
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
*1 For 5 seconds
Symbol
IF
VR
P
V CEO
V ECO
IC
PC
P tot
T opr
T stg
T sol
(C0.3)
g
2.85
Rest of gate
4 - 0.15 (2) 4 - 0.4
g
2.54
41
* Tolerance 0.2mm
* Burr's dimensions : 0.15MAX.
* Rest of gate: 0.3MAX.
* ( ) : Reference dimensions
3 2 * The dimensions indicated by g refer
to those measured from the lead base.
(Ta = 25˚C )
Rating
50
6
75
35
6
20
75
100
- 25 to + 85
- 40 to + 100
260
Unit
mA
V
mW
V
V
mA
mW
mW
˚C
˚C
˚C
Soldering area
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.









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GP1S28 Даташит, Описание, Даташиты
s Electro-optical Characteristics
Input
Output
Trans-
fer
charac-
teristics
Parameter
Forward voltage
Reverse current
Collector dark current
Collector Current
Collector-emitter saturation voltage
Response time
Rise time
Fall time
Symbol
VF
IR
I CEO
Ic
V CE(sat)
tr
tf
Conditions
IF = 20mA
VR = 3V
V CE = 20V
VCE = 5V, I F = 5mA
IF = 10mA, I C = 50 µ A
VCE=5V, R L=1k
IC=100 µ A
GP1S28
MIN.
-
-
-
100
-
-
-
(Ta = 25˚C )
TYP.
1.2
-
-
-
-
50
50
MAX.
1.4
10
1 x 10 - 7
1300
0.4
150
150
Unit
V
µA
A
µA
V
µs
µs
Fig. 1 Forward Current vs. Ambient
Temperature
60
50
40
30
20
10
0
- 25 0 25 50 75 85 100
Ambient temperature T a (˚C)
Fig. 3 Forward Current vs. Forward Voltage
500
200 T a= 75˚C
50˚C
100
50
25˚C
0˚C
- 25˚C
20
10
5
2
1
0 0.5 1 1.5 2 2.5 3 3.5
Forward voltage V F (V)
Fig. 2 Power Dissipation vs.
Ambient Temperature
120
P tot
100
80 P, Pc
60
40
20
0
- 25 0 25 50 75 85 100
Ambient temperature T a (˚C)
Fig. 4 Collector Current vs. Forward Current
2.0
1.8 V CE= 5V
T a= 25˚C
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0 1 2 3 4 5 6 7 8 9 10
Forward current I F ( mA )









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GP1S28 Даташит, Описание, Даташиты
Fig. 5 Collector Current vs. Collector-
emitter Voltage
11
10 PC(MAX.)
9
8 IF = 50mA
7 40mA
6
5 30mA
4
20mA
3
2 10mA
1 5mA
0
0 1 2 3 4 5 6 7 8 9 10
Collector-emitter voltage V CE (V)
Fig. 7 Collector-emitter Saturation Voltage
vs. Ambient Temperature
0.16
0.14 IF = 10mA
IC = 50 µ A
0.12
0.10
0.08
0.06
0.04
0.02
0
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Test Circuit for Response Time
Input RD
VCC
RL
Output
Input
Output
td ts
tr tf
GP1S28
Fig. 6 Collector Current vs.
Ambient Temperature
0.6
0.5
V CE= 5V
IF = 5mA
0.4
0.3
0.2
0.1
0
-25 0 25 50 75 100
Ambient temperature Ta (˚C)
Fig. 8 Response Time vs. Load Resistance
10 %
90 %
500 VCE = 5V
200 IC = 100 µ A
T a = 25˚C
100
50 tf
20 tr
10 td
5
2
1 ts
5
0.3
0.05 0.1 0.2 0.5 1 2
5 10 20
Load resistance R L ( k )
50 100
Fig. 9 Collector Dark Current vs. Ambient
Temperature
10 - 6
5
V CE= 20V
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
2
10 - 10
0
25 50 75
Ambient temperature T a (˚C)
100










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