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GR1B PDF даташит

Спецификация GR1B изготовлена ​​​​«EIC discrete Semiconductors» и имеет функцию, называемую «GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS».

Детали детали

Номер произв GR1B
Описание GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
Производители EIC discrete Semiconductors
логотип EIC discrete Semiconductors логотип 

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GR1B Даташит, Описание, Даташиты
GR1A - GR1M
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
SMA (DO-214AC)
1.1 ± 0.3
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 55 °C
Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 125 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL GR1A GR1B GR1D GR1G GR1J GR1K GR1M UNIT
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0 A
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
35
1.3
5
150
150 250
15
- 65 to + 150
- 65 to + 150
500
A
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002









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GR1B Даташит, Описание, Даташиты
RATING AND CHARACTERISTIC CURVES ( GR1A - GR1M )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
+ 0.5
Trr
+
50 Vdc
(approx)
D.U.T.
1
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
0
- 0.25
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 50/100 ns/cm
1
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE W AVE
24 Ta = 50 °C
0.6 18
0.4 12
0.2
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
6
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
20
10
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
1.0
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 100 °C
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : April 2, 2002










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