GRTG PDF даташит
Спецификация GRTG изготовлена «EIC discrete Semiconductors» и имеет функцию, называемую «GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS». |
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Детали детали
Номер произв | GRTG |
Описание | GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS |
Производители | EIC discrete Semiconductors |
логотип |
2 Pages
No Preview Available ! |
GRTA - GRTM
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
SMC (DO-214AB)
0.060(1.5 2)
0.030(0.7 6)
0.008(0.203)
0.004(0.102)
0.121(3.07)
0.115(2.92)
0.245(6.2 2)
0.220(5.5 9)
0.10 3(2.62 )
0.07 9(2.00 )
0.012(0.305)
0.006(0.152)
Dimensions in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 2.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL GRTA GRTB GRTD GRTG GRTJ GRTK GRTM UNIT
VRRM
50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
IF(AV) 2.5 A
IFSM 80 A
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
1.3
10
500
150 250
- 65 to + 150
- 65 to + 150
500
V
µA
µA
ns
pf
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 2, 2002
No Preview Available ! |
RATING AND CHARACTERISTIC CURVES ( GRTA - GRTM )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
+ 0.5 A
Trr
+ 50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25 A
1 Ω OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
SET TIME BASE FOR 50/100 ns/cm
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.5
2.0
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
8.3 ms SINGLE HALF SINE WAVE
Ta = 50 °C
80
1.5 60
1.0 40
0.5
60Hz RESISTIVE OR INDUCTIVE LOAD
00
25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
20
0
1
2
4 6 10 20
40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 25 °C
10
10
TJ = 100 °C
1.0
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 01 : Apr. 2, 2002
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Номер в каталоге | Описание | Производители |
GRTA | GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS | EIC discrete Semiconductors |
GRTA | (GRTx) GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS | EIC discrete Semiconductors |
GRTB | GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS | EIC discrete Semiconductors |
GRTB | (GRTx) GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS | EIC discrete Semiconductors |
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