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C3459 PDF даташит

Спецификация C3459 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC3459».

Детали детали

Номер произв C3459
Описание NPN Transistor - 2SC3459
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C3459 Даташит, Описание, Даташиты
Ordering number:EN1591C
NPN Triple Diffused Planar Silicon Transistor
2SC3459
800V/4.5A Switching Regulator Applications
Features
· High breakdown voltage and high reliability.
· Fast switching speed (tf : 0.1µs typ).
· Wide ASO.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC3459]
Specifications
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
PW300µs, Duty Cycle10%
Tc=25˚C
Ratings
1100
800
7
4.5
15
2
90
150
–55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min typ
Collector Cutoff Current
ICBO VCB=800V, IE=0
Emitter Cutoff Current
IEBO VEB=5V, IC=0
DC Current Gain
hFE1
hFE2
VCE=5V, IC=0.3A
VCE=5V, IC=1.5A
10*
8
Gain-Bandwidth Product
fT VCE=10V, IC=0.3A
Output Capacitance
Cob VCB=10V, f=1MHz
* : The hFE1 of the 2SC3459 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle.
15
90
10 K 20 15 L 30 20 M 40
max
10
10
40*
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/4237AT/3085KI/D054KI, TS No.1591–1/4









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C3459 Даташит, Описание, Даташиты
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Collector-to-Emitter Sustain Voltage
Turn-ON Time
Storage Time
Fall Time
2SC3459
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEX(sus)
ton
tstg
tf
IC=2A, IB=0.4A
IC=2A, IB=0.4A
IC=1mA, IE=0
IC=5mA, RBE=
IE=1mA, IC=0
IC=2A, IB1=–IB2=0.4A, L=2mH, clamped
VCC=400V, 5IB1=–2.5IB2=IC=3A, RL=133
VCC=400V, 5IB1=–2.5IB2=IC=3A, RL=133
VCC=400V, 5IB1=–2.5IB2=IC=3A, RL=133
Switching Time Test Circuit
Ratings
min typ
1100
800
7
800
max
2.0
1.5
0.5
3.0
0.3
Unit
V
V
V
V
V
V
µs
µs
µs
No.1591–2/4









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C3459 Даташит, Описание, Даташиты
2SC3459
No.1591–3/4










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