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даташит 2N2222 PDF ( Datasheet )

2N2222 Datasheet Download - Central

Номер произв 2N2222
Описание SILICON NPN TRANSISTORS
Производители Central
логотип Central логотип 

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2N2222 Даташит, Описание, Даташиты
2N2221
2N2222
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2221 and
2N2222 are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Power Dissipation (TC=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
TJ, Tstg
ΘJA
ΘJC
60
30
5.0
800
500
1.2
-65 to +200
350
146
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=50V
-
ICBO
VCB=50V, TA=150°C
-
IEBO
VEB=3.0V
-
BVCBO
IC=10μA
60
BVCEO
IC=10mA
30
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=150mA, IB=15mA
-
VCE(SAT)
IC=500mA, IB=50mA
-
VBE(SAT)
IC=150mA, IB=15mA
0.6
VBE(SAT)
IC=500mA, IB=50mA
-
fT
VCE=20V, IC=20mA, f=100MHz
250
Cob VCB=10V, IE=0, f=100kHz
-
Cib VEB=0.5V, IC=0, f=100kHz
-
MAX
10
10
10
-
-
-
0.4
1.6
1.3
2.6
-
8.0
30
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R2 (24-July 2013)







No Preview Available !

2N2222 Даташит, Описание, Даташиты
2N2221
2N2222
SILICON
NPN TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N2221
2N2222
SYMBOL TEST CONDITIONS
MIN MAX
MIN MAX
hFE VCE=10V, IC=0.1mA
20 -
35 -
hFE VCE=10V, IC=1.0mA
25 -
50 -
hFE VCE=10V, IC=10mA
35 -
75 -
hFE VCE=10V, IC=10mA, TA=-55°C
15 -
35 -
hFE VCE=10V, IC=150mA
40 120
100 300
hFE VCE=1.0V, IC=150mA
20 -
50 -
hFE VCE=10V, IC=500mA
25 -
40 -
TO-18 CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (24-July 2013)










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