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даташит 2N2222 PDF ( Datasheet )

2N2222 Datasheet Download - Multicomp

Номер произв 2N2222
Описание Low Power Bipolar Transistors
Производители Multicomp
логотип Multicomp логотип 

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2N2222 Даташит, Описание, Даташиты
2N2222
Low Power Bipolar Transistors
Features:
NPN Silicon Planar Switching Transistors.
Switching and Linear application DC and VHF Amplifier applications.
TO-18 Metal Can Package
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Minimum Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0.91 1.17
0.71 1.21
12.70
-
45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
Page 1
06/04/06 V1.0







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2N2222 Даташит, Описание, Даташиты
2N2222
Low Power Bipolar Transistors
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Description
Symbol
2N2222
Collector Emitter Voltage
VCEO
30
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
IC 800
500
PD
2.28
1.2
6.85
Operating and Storage Junction Temperature Range
TJ, Tstg
-65 to +200
Unit
V
mA
mW
mW/°C
W
mW/°C
°C
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Description
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Symbol
BVCEO
BVCBO
VEBOf
Test Condition
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
Value
Minimum
Maximum
30 -
60 -
5-
Collector Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICBO
VCB = 50V, IE = 0
VCB = 50V, IE = 0
Ta = 150°C
*VCE (Sat)
*VBE (Sat)
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
-
-
0.6
10
10
0.4
1.6
1.3
2.6
Unit
V
nA
µA
V
Page 2
06/04/06 V1.0







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2N2222 Даташит, Описание, Даташиты
2N2222
Low Power Bipolar Transistors
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Parameter
Symbol
Test Condition
2N2222
Minimum
Maximum
DC Current Gain
IC = 0.1mA, VCE = 10V*
IC = 1mA, VCE = 10V
IC = 10mA, VCE = 10V*
hFE
IC = 150mA, VCE = 1V*
IC = 150mA, VCE = 1V*
IC = 500mA, VCE = 10V*
35
50
75
50
100
30
300
Unit
-
Dynamic Characteristics
Transition Frequency
Output Capacitance
Input Capacitance
Switching Characteristics
Delay Time
ft
IC = 20mA, VCE = 20V
f = 100MHz
Cob
VCB = 10V, IE = 0
f = 100kHz
Cib
VEB = 0.5V, IC = 0
f = 100kHz
td IC = 150mA,IB1 = 15mA
Rise Time
Storage Time
tr VCC = 30V, VBE (off) = 0.5V
ts IC = 150mA, IB1 = 15mA
Fall Time
tf
*Pulse Condition: Pulse Width 300µs, Duty Cycle 2%.
IB2 = 15mA, VCC = 30V
250
-
-
-
-
-
-
Part Number Table
Package
TO-18
Part Number
2N2222
- MHz
8
pF
30
10
25
ns
225
60
Page 3
06/04/06 V1.0










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