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даташит 2N2369 PDF ( Datasheet )

2N2369 Datasheet Download - Multicomp

Номер произв 2N2369
Описание High Speed Switching Transistors
Производители Multicomp
логотип Multicomp логотип 

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2N2369 Даташит, Описание, Даташиты
2N2369, 2369A
High Speed Switching Transistors
Features:
NPN Silicon Planar Epitaxial Transistors.
Fast switching devices exhibiting short turn-off and low saturation voltage characteristics.
2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power
and High Speed Switching Applications.
TO-18 Metal Can Package
Dimensions Minimum Maximum
A 5.24 5.84
B 4.52 4.97
C 4.31 5.33
D 0.40 0.53
E - 0.76
F - 1.27
G - 2.97
H 0.91 1.17
J 0.71 1.21
K 12.70
-
L 45°
Dimensions : Millimetres
Pin Configuration
1. Emitter
2. Base
3. Collector
Page 1
31/05/05 V1.0







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2N2369 Даташит, Описание, Даташиты
2N2369, 2369A
High Speed Switching Transistors
Absolute Maximum Ratings
Parameter
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak (10µs Pulse)
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at Tc = 25°C
Tc = 100°C
Derate above 100°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VCBO
VEBO
IC
IC (Peak)
PD
PD
Tj, Tstg
Value
15
40
4.5
200
500
360
2.06
1.2
0.68
6.85
-65 to +200
Unit
V
mA
mW
mW/°C
W
mW/°C
°C
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Symbol
VCEO*(sus)
VCES
VCBO
VEBO
Test Condition
IC = 10mA, IB = 0
IC = 10µA, VBE = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
2N2369
2N2369A
>15
>40
>40
>4.5
Collector Cut off Current
ICBO
ICES
VCB = 20V, IE = 0
VCB = 20V, IE = 0, Ta = 150°C
VCE = 20V, VBE = 0
<400
<30
-
-
-
<400
Base Current
IB
Collector Emitter Saturation Voltage VCE(sat)*
VCE = 20V, VBE = 0
IC = 10mA, IB = 1mA
IC = 30mA, IB = 3mA
IC = 100mA, IB = 10mA
IC = 10mA, IB = 1mA, Ta = 125°C
-
<0.25
-
-
-
<400
<0.20
<0.25
<0.50
<0.30
Base Emitter Saturation Voltage
VBE(sat)*
IC = 10mA, IB = 1mA
IC = 30mA, IB = 3mA
IC = 100mA, IB = 10mA
IC = 10mA, IB = 1mA, Ta = +125°C
IC = 10mA, IB = 1mA, Ta = -55°C
0.7 to 0.85
-
-
-
-
0.7 to 0.85
<1.15
<1.60
>0.59
<1.20
DC Current Gain
IC = 10mA, VCE = 1V
40 to 120 40 to 120
hFE* IC = 10mA, VCE = 1V, Ta = -55°C
>20
-
IC = 100mA, VCE = 0.35V, Ta = -55°C
-
>20
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%
Unit
V
nA
µA
nA
nA
V
-
Page 2
31/05/05 V1.0







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2N2369 Даташит, Описание, Даташиты
2N2369, 2369A
High Speed Switching Transistors
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
DC Current Gain
hFE*
IC = 10mA, VCE = 0.35V
IC = 30mA, VCE = 0.4V
IC = 100mA, VCE = 1V
IC = 100mA, VCE = 2V
Small Signal Characteristic
Transition Frequency
ft VCE = 10V, IC = 10mA, f = 100MHz
Output Capacitance
Turn on Time
Turn off Time
Storage time
Cobo
ton
toff
ts
VCB = 5V, IE = 0, f = 140kHz
IC = 10mA, IB1 = 3mA,
IB = -1.5mA, VCC = 3V
IC = 10mA, IB1 = 3mA,
IB = -1.5mA, VCC = 3V
IC = 100mA, IB1 = IB = 10mA, VCC = 10V
*Pulse Test : Pulse Width = 300µs, Duty Cycle = 2%
2N2369
-
-
-
>20
2N2369A
40 to 120
>30
>20
-
>500
<4.0
<12
- <15
<13
Unit
-
MHz
pF
ns
Specifications
VCEO
maximum
(V)
IC
maximum
(A)
15 0.2
VCE(sat)
maximum
(V)
at IC = 10mA
0.25
0.20
toff
maximum
(ns)
at IC = 10mA
18
hFE
minimum
at IC = 10mA
PD
at Ta = 25°C
(mW)
40 360
Package
and
Pin Out
TO-18
Part Number
2N2369
2N2369A
Page 3
31/05/05 V1.0










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