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C3642 PDF даташит

Спецификация C3642 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC3642».

Детали детали

Номер произв C3642
Описание NPN Transistor - 2SC3642
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C3642 Даташит, Описание, Даташиты
Ordering number:EN1626C
NPN Triple Diffused Planar Silicon Transistor
2SC3642
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Features
· High reliability (Adoption of HVP process).
· Fast speed.
· High breakdown voltage.
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC3642]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Tc=25˚C
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
DC Current Gain
Storage Time
Fall Time
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE
tstg
tf
VCB=800V, IE=0
VCE=1200V, RBE=0
IC=100mA, IB=0
VEB=5V, IC=0
IC=4A, IB=0.8A
IC=4A, IB=0.8A
VCE=5V, IC=0.8A
IC=4A, IB1=0.8A, IB2=–1.6A
IC=4A, IB1=0.8A, IB2=–1.6A
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
1200
800
7
6
12
100
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
800
8
0.1
max
10
0.5
1
5
1.5
3.0
0.2
Unit
µA
mA
V
mA
V
V
µs
µs
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N2098HA (KT)/80796TS (KOTO) 8-7453/4217KI/3095KI/N224KI, TS No.1626–1/4









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C3642 Даташит, Описание, Даташиты
Switching Time Test Circuit
2SC3642
No.1626–2/4









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C3642 Даташит, Описание, Даташиты
2SC3642
No.1626–3/4










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Номер в каталогеОписаниеПроизводители
C3642NPN Transistor - 2SC3642Sanyo Semicon Device
Sanyo Semicon Device
C3643NPN Transistor - 2SC3643Sanyo
Sanyo
C3644NPN Transistor - 2SC3644Sanyo
Sanyo
C3645NPN Transistor - 2SC3645Sanyo
Sanyo

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