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HFS2N60S PDF даташит

Спецификация HFS2N60S изготовлена ​​​​«SemiHow» и имеет функцию, называемую «600V N-Channel MOSFET».

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Номер произв HFS2N60S
Описание 600V N-Channel MOSFET
Производители SemiHow
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HFS2N60S Даташит, Описание, Даташиты
Nov 2007
HFS2N60S
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ = 4.2
ID = 2.0 A
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 6.0 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 4.2 (Typ.) @VGS=10V
‰ 100% Avalanche Tested
TO-220F
123
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
600
2.0*
1.35*
8.0*
±30
120
2.0
5.4
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
23
0.18
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RθJC
RθJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ.
--
--
Max.
5.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
Units
℃/W
◎ SEMIHOW REV.A0,Nov 2007









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HFS2N60S Даташит, Описание, Даташиты
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 1.0 A
2.0
--
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS
/ΔTJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 0 V, ID = 250
ID = 250 ㎂, Referenced to 25℃
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
600
--
--
--
--
--
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
Switching Characteristics
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 300 V, ID = 2.0 A,
RG = 25
(Note 4,5)
VDS = 480V, ID = 2.0 A,
VGS = 10 V
(Note 4,5)
--
--
--
--
--
--
--
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 2.0 A, VGS = 0 V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 2.0 A, VGS = 0 V
diF/dt = 100 A/μs (Note 4)
--
--
--
--
--
Typ Max Units
-- 4.0
4.2 5.0
V
-- -- V
0.6 -- V/℃
-- 1
-- 10
-- 100
-- -100
280 365
37 48
6.0 8.0
9 28
25 60
24 58
28 66
6.0 8.0 nC
1.3 -- nC
2.6 -- nC
-- 2.0
-- 8.0
-- 1.4
230 --
1.0 --
A
V
μC
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=56mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD2.0A, di/dt200A/μs, VDDBVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width 300μs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,Nov 2007









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HFS2N60S Даташит, Описание, Даташиты
Typical Characteristics
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
12
9
V = 10V
GS
6
VGS = 20V
3
* Note : T = 25oC
J
0
012345
ID, Drain Current[A]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 120V
10 VDS = 300V
VDS = 480V
8
6
4
2
* Note : ID = 2.0A
0
02468
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Nov 2007










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