DataSheet26.com


даташит FGH20N60SFD PDF ( Datasheet )

FGH20N60SFD Datasheet PDF Download - Fairchild Semiconductor

Номер произв FGH20N60SFD
Описание 20A Field Stop IGBT
Производители Fairchild Semiconductor
логотип Fairchild Semiconductor логотип 
предварительный просмотр
1Page
		

No Preview Available !

FGH20N60SFD Даташит, Описание, Даташиты
FGH20N60SFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.2V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
September 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
G
E
Ratings
600
± 20
40
20
60
165
66
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.76
2.51
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGH20N60SFD Rev. A
1
www.fairchildsemi.com

No Preview Available !

FGH20N60SFD Даташит, Описание, Даташиты
Package Marking and Ordering Information
Device Marking
Device
FGH20N60SFD FGH20N60SFDTU
Package
TO-247
Packaging
Type
Tube
Qty per Tube
30ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 20A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 20A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 20A,
VGE = 15V
600 - - V
- 0.6 - V/oC
- - 250 µA
-
-
±400
nA
4.0 5.0 6.5
- 2.2 2.8
- 2.4 -
V
V
V
- 940 -
- 110 -
- 40 -
pF
pF
pF
- 13 - ns
- 16 - ns
- 90 - ns
-
24 48
ns
- 0.37 -
mJ
- 0.16 -
mJ
- 0.53 -
mJ
- 12 - ns
- 16 - ns
- 95 - ns
- 28 - ns
- 0.4 - mJ
- 0.28 -
mJ
- 0.69 -
mJ
- 65 - nC
- 7 - nC
- 33 - nC
FGH20N60SFD Rev. A
2
www.fairchildsemi.com

No Preview Available !

FGH20N60SFD Даташит, Описание, Даташиты
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM Diode Forward Voltage
IF = 10A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IES =10A, dIES/dt = 200A/µs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.9
1.7
34
57
41
96
Max
2.5
-
-
-
-
-
Units
V
ns
nC
FGH20N60SFD Rev. A
3
www.fairchildsemi.com






Всего страниц 9 Pages
Скачать PDF[ FGH20N60SFD.PDF Даташит ]

Ссылка Поделиться


Related Datasheets

Номер в каталогеОписаниеПроизводители
FGH20N60SFD20A Field Stop IGBTFairchild Semiconductor
Fairchild Semiconductor
FGH20N60SFDTU_F08520A Field Stop IGBTFairchild Semiconductor
Fairchild Semiconductor

Номер в каталоге Описание Производители
157UD2

Dual op amp

ETC 1
ETC 1
6MBP200RA-060

Intelligent Power Module

Fuji Electric
Fuji Electric
ADF41020

18 GHz Microwave PLL Synthesizer

Analog Devices
Analog Devices
AN-SY6280

Low Loss Power Distribution Switch

Silergy
Silergy
AP6354

2x2 WiFi + Bluetooth4.1 Module

AMPAK
AMPAK

Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z


DataSheet26.com    |    2018    |   Контакты    |    Поиск