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даташит C5551 PDF ( Datasheet )

C5551 Datasheet Download - Sanyo Semicon Device

Номер произв C5551
Описание 2SC5551
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 
предварительный просмотр
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C5551 Даташит, Описание, Даташиты
Ordering number:ENN6328
NPN Epitaxial Planar Silicon Transistor
2SC5551
High-Frequency Medium-Output
Amplifier Applications
Features
· High fT : (fT=3.5GHz typ).
· Large current : (IC=300mA).
· Large allowable collector dissipation (1.3W max).
Package Dimensions
unit:mm
2038A
[2SC5551]
4.5
1.6
1.5
0.4 0.5
3 1.5 2
3.0
1
0.75
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
Mounted on a ceramic board (250mm2× 0.8mm)
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
VCB=20V, IE=0
VEB=1V, IC=0
VCE=5V, IC=50mA
VCE=5V, IC=300mA
* : The 2SC5551 is classified by 50mA hFE as follows :
Marking
EB
Rank
E
F
hFE
90 to 180
135 to 270
0.4
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
(Bottom view)
Ratings
40
30
2
300
600
1.3
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ max
Unit
1.0 µA
5.0 µA
90 270
20
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21000TS (KOTO) TA-2665 No.6328–1/5

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C5551 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Saturation Voltage
2SC5551
Symbol
Conditions
fT
Cob
Cre
VCE(sat)
VBE(sat)
VCE=5V, IC=50mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
IC=50mA, IB=5mA
IC=50mA, IB=5mA
Ratings
min typ max
Unit
3.5 GHz
2.9 4.0 pF
1.5 pF
0.15
0.3 V
0.9 1.2 V
IC -- VCE
100
500µA
450µA
80
400µA
350µA
60 300µA
250µA
40 200µA
150µA
20 100µA
50µA
0
0 4 8 12 16
Collector-to-Emitter Voltage, VCE – V
VCE(sat) -- IC
1.0
7 IC / IB=10
IB=0
20
IT01066
5
3
2
0.1
7
5
3
2
0.01
1.0
10
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC – A
IT01068
Cob, Cre -- VCB
f=1MHz
7
5
3
2
1.0
1.0
Cob
Cre
23
5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V IT01070
hFE -- IC
1000
7 VCE=5V
5
3
2
100
7
5
3
2
10
1.0
20
18
16
14
12
10
8
6
4
2
0
1.0
10
7
5
3
2
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC – mA
IT01067
S21e2 -- IC
VCE=5V
f=200MHz
f=500MHz
23
5 7 10 2 3 5 7 100 2 3
Collector Current, IC – mA
fT -- IC
5 7 1000
IT01069
VCE=5V
1.0
7
5
3
2
0.1
1.0
2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC – mA
IT01071
No.6328–2/5

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C5551 Даташит, Описание, Даташиты
2SC5551
1000
7 ICP=600mA
5
3 IC=300mA
2
100
ASO
DC
10ms
operation
1.4
1.3
1.2
1.0
0.8
7 0.6
5
0.4
3
2 Ta=25°C
Single pulse
10 Mounted on a ceramic board (250mm2×0.8mm)
1.0
Co2 llecto3r-to-Em5itter7Volt1a0ge,
VCE
2
35
V IT01072
0.2
0
0
S Parameters (Common emitter)
VCE=5V, IC=1mA, ZO=50
Freq (MHz)
100
| S11 |
0.941
S11
–101.1
200
0.859
–141.0
300
0.829
–158.6
400
0.831
–169.5
500
0.840
–178.6
600
0.816
172.3
700
0.816
164.9
800
0.814
157.3
900
0.800
150.9
1000
0.804
145.0
| S21 |
2.373
1.425
0.990
0.845
0.715
0.638
0.507
0.466
0.443
0.388
S21
119.9
93.8
79.4
69.2
61.1
54.7
49.8
47.0
45.7
47.3
| S12 |
0.088
0.097
0.088
0.074
0.058
0.055
0.064
0.098
0.134
0.173
PC -- Ta
Mounted on a ceramic board (250mm ×2 0.8mm)
20 40 60 80 100 120 140 160
Ambient Temperature, Ta – ˚C
IT01073
S12
38.7
18.3
12.0
10.7
25.2
51.6
78.4
87.3
90.2
92.2
| S22 |
0.884
0.821
0.755
0.766
0.798
0.790
0.771
0.813
0.792
0.782
S22
–17.8
–25.2
–33.8
–41.9
–49.9
–58.4
–66.7
–75.0
–82.8
–90.0
VCE=5V, IC=5mA, ZO=50
Freq (MHz)
100
| S11 |
0.803
200 0.724
300 0.701
400 0.700
500 0.693
600 0.689
700 0.695
800 0.691
900 0.693
1000
0.705
S11
–114.9
–151.3
–165.9
–175.1
177.1
170.2
164.3
158.3
153.0
147.9
| S21 |
7.414
4.172
2.952
2.286
1.857
1.559
1.371
1.174
1.067
0.988
S21
115.7
93.7
82.3
73.9
66.6
60.0
54.3
48.8
44.5
40.9
| S12 |
0.068
0.076
0.078
0.082
0.091
0.100
0.117
0.137
0.161
0.189
S12
41.3
31.5
35.0
42.9
51.9
58.6
64.7
69.1
71.4
72.3
| S22 |
0.635
0.472
0.431
0.432
0.437
0.443
0.451
0.463
0.479
0.496
S22
–36.3
–41.7
–45.4
–50.2
–56.6
–63.4
–70.3
–77.3
–84.1
–90.3
VCE=5V, IC=10mA, ZO=50
Freq (MHz)
100
| S11 |
0.718
200 0.658
300 0.639
400 0.632
500 0.628
600 0.627
700 0.626
800 0.629
900 0.631
1000
0.633
S11
–127.2
–157.9
–170.4
–178.7
174.6
168.5
162.9
157.4
152.7
148.0
| S21 |
10.489
5.747
3.882
2.954
2.405
2.040
1.778
1.571
1.405
1.292
S21
111.3
92.2
82.7
75.4
68.8
62.8
57.4
52.3
47.9
43.7
| S12 |
0.059
0.069
0.079
0.092
0.107
0.124
0.143
0.162
0.185
0.209
S12
43.0
41.0
47.7
52.8
57.4
60.5
62.9
64.7
64.8
64.8
| S22 |
0.509
0.329
0.286
0.271
0.273
0.280
0.296
0.306
0.318
0.339
S22
–50.8
–58.8
–61.0
–65.2
–70.5
–76.9
–81.6
–87.9
–93.9
–98.4
No.6328–3/5






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