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даташит D669 PDF ( Datasheet )

D669 Datasheet Download - Hitachi Semiconductor

Номер произв D669
Описание 2SD669
Производители Hitachi Semiconductor
логотип Hitachi Semiconductor логотип 
предварительный просмотр
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D669 Даташит, Описание, Даташиты
2SD669, 2SD669A
Silicon NPN Epitaxial
Application
Low frequency power amplifier complementary pair with 2SB649/A
Outline
TO-126 MOD
123
1. Emitter
2. Collector
3. Base

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D669 Даташит, Описание, Даташиты
2SD669, 2SD669A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC
PC * 1
Tj
Tstg
Ratings
2SD669
180
120
5
1.5
3
1
20
150
–55 to +150
2SD669A
180
160
5
1.5
3
1
20
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
2

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D669 Даташит, Описание, Даташиты
2SD669, 2SD669A
Electrical Characteristics (Ta = 25°C)
2SD669
2SD669A
Item
Symbol Min Typ Max Min Typ Max
Collector to base
breakdown voltage
V(BR)CBO
180 —
180 —
Collector to emitter
breakdown voltage
V(BR)CEO
120 —
160 —
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
——
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
hFE2
Collector to emitter
saturation voltage
VCE(sat)
——
60 —
30 —
——
10 —
320 60
— 30
1—
10
200
1
Base to emitter voltage VBE
Gain bandwidth product fT
Collector output
capacitance
Cob
— — 1.5 — — 1.5
— 140 — — 140 —
— 14 — — 14 —
Notes: 1. The 2SD669 and 2SD669A are grouped by hFE1 as follows.
2. Pulse test.
Unit Test conditions
V IC = 1 mA, IE = 0
V IC = 10 mA, RBE =
V IE = 1 mA, IC = 0
µA
V
V
MHz
pF
VCB = 160 V, IE = 0
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 500 mA*2
IC = 500 mA,
IB = 50 mA*2
VCE = 5 V, IC = 150 mA*2
VCE = 5 V, IC = 150 mA*2
VCB = 10 V, IE = 0,
f = 1 MHz
2SD669
2SD669A
B
60 to 120
60 to 120
C
100 to 200
100 to 200
D
160 to 320
Maximum Collector Dissipation
Curve
30
20
10
0 50 100 150
Case temperature TC (°C)
Area of Safe Operation
3
(13.3 V, 1.5 A)
1.0
(40 V, 0.5 A)
0.3
DC Operation(TC = 25°C)
0.1
(120 V, 0.04 A)
0.03 (160 V, 0.02A)
2SD669
2SD669A
0.01
1 3 10 30 100 300
Collector to emitter voltage VCE (V)
3






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