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HF05D060ACE PDF даташит

Спецификация HF05D060ACE изготовлена ​​​​«International Rectifier» и имеет функцию, называемую «Hexfred Die».

Детали детали

Номер произв HF05D060ACE
Описание Hexfred Die
Производители International Rectifier
логотип International Rectifier логотип 

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HF05D060ACE Даташит, Описание, Даташиты
PD - 94412A
HF05D060ACE
Features
• GEN3 Hexfred Technology
• Low VF
• Low IRR
• Low tRR
• Soft Reverse Recovery
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
• Low EMI
• Excellent Current Sharing in Parallel Operation
• Qualified for Industrial Market
Hexfred Die in Wafer Form
600V
IF(nom)=5A
VF(typ)= 1.15V @ IF(nom) @ 25°C
Motor Control Antiparallel Diode
150mm Wafer
Reference Standard IR Package Part: IRGS10B60KD
Parameter
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
Test Conditions
VF Forward Voltage Drop
BVR Reverse Breakdown Voltage
IRM Reverse Leakage Current
0.8V min, 1.05V max
600V min
10µA max
IC = 1A, TJ = 25°C
TJ = 25°C, IR = 1mA
TJ = 25°C, VR = 600V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Cr (0.1µm)- NiV (0.2µm) - Ag (0.25µm)
Nominal Front Metal Composition, (Thickness)
99% Al/1% Si, (3µm)
Dimensions
0.075'' x 0.076"
Wafer Diameter
150mm, with std. < 100 > flat
Wafer Thickness, Tolerance
376µm, +/-15µm
Relevant Die Mechanical Dwg. Number
01-5507
Minimum Street Width
125µm
Reject Ink Dot Size
0.25mm diameter minimum
Ink Dot Location
Consistent throughout same wafer lot
Recommended Storage Environment
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Die Attach Conditions
For optimum electrical results, die attach
temperature should not exceed 300°C
Die Outline
www.irf.com
1
07/01/04









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HF05D060ACE Даташит, Описание, Даташиты
100
0
-100
-200
-300
-400
-500
-600
-0.15
HF05D060ACE
Hexfred Die in Wafer Form
Fig. 1 - Typical Diode Recovery Waveform
V CC = 400V; Rg = 47 ; Tj = 150°C
L = 200µH; Driver = IRGS10B60K
15
Voltage
10
5
0
-5
Current
-10
-15
-20
-0.10 -0.05 0.00 0.05 0.10 0.15 0.20 0.25
time (µS)
Fig. 2 - Typical Diode Forward
Characteristics
40
35
30 - 40°C
25°C
25 150°C
20
15 25°C
10
5 150°C
0
0
- 40°C
12
V F (V)
3
www.irf.com
Fig. 3 - Diode Recovery Circuit
DUT
L
DRIVER
Rg
VCC
2










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Номер в каталогеОписаниеПроизводители
HF05D060ACEHexfred DieInternational Rectifier
International Rectifier

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