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C4168 PDF даташит

Спецификация C4168 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC4168».

Детали детали

Номер произв C4168
Описание NPN Transistor - 2SC4168
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C4168 Даташит, Описание, Даташиты
Ordering number:EN2479A
Features
· Fast switching speed.
· High gain-bandwidth product.
· Low saturation voltage.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1607/2SC4168
High-Speed Switching Applications
Package Dimensions
unit:mm
2018A
[2SA1607/2SC4168]
( ) : 2SA1607
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Symbol
Conditions
ICBO
IEBO
hFE
VCB=(–)30V, IE=0
VEB=(–)4V, IC=0
VCE=(–)1V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
C : Collector
B : Base
E : Emitter
SANYO : CP
Ratings
(–)40
(–)20
(–)5
(–)150
(–)300
(–)30
200
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
60*
700
(400)
max
(–)0.1
(–)0.1
270*
(180)
Unit
µA
µA
MHz
MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82098HA (KT)/7129MO/4077TA, TS No.2479-1/5









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C4168 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Delay Time
Rise Time
Storage Time
Fall Time
2SA1607/2SC4168
Symbol
Conditions
Cob VCB=(–)10V, f=1MHz
VCE(sat) IC=(–)10mA, IB=(–)1mA
VBE(sat) IC=(–)10mA, IB=(–)1mA
V(BR)CBO
V(BR)CEO
V(BR)EBO
td
tr
tstg
tf
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)10µA, IC=0
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
Ratings
min typ
(2.9)
2.6
0.08
(–0.07)
0.72
(–0.75)
(–)40
(–)20
(–)5
(14)11
(11)10
(80)70
(16)15
max
(–)0.2
(–)1.0
20
20
180
25
Unit
pF
pF
V
V
V
V
V
V
V
ns
ns
ns
ns
* : The 2SA1607/2SC4168 are classified by 10mA hFE as follows :
2SA1607 60 3 120 90 4 180
2SC4168
60 3 120 90 4 180 135 5 270
Marking 2SA1607 : YL
2SC4168 : GT
hFE rank 2SA1607 : 3, 4
2SC4168 : 3, 4, 5
Switching Time Test Circuit
5IB1=–5IB2=IC=50mA
(For PNP, the polarity is reserved.)
Unit (reisistance : , capacitance : F)
No.2479-2/5









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C4168 Даташит, Описание, Даташиты
2SA1607/2SC4168
No.2479-3/5










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