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SBD20C60T PDF даташит

Спецификация SBD20C60T изготовлена ​​​​«Silan Microelectronics» и имеет функцию, называемую «60V SCHOTTKY RECTIFIER».

Детали детали

Номер произв SBD20C60T
Описание 60V SCHOTTKY RECTIFIER
Производители Silan Microelectronics
логотип Silan Microelectronics логотип 

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SBD20C60T Даташит, Описание, Даташиты
SBD20C60T/F_Datasheet
20A, 60V SCHOTTKY RECTIFIER
DESCRIPTION
SBD20C60T/F is schottky rectifier fabricated in silicon epitaxial
planar technology, Guard ring construction for over voltage
protection and enhanced long term reliability.
Typical applications are in switching power supplies, converter,
free-wheeling diodes, and reverse battery protection.
FEATURES
Guard ring for Stress Protection
High Surge Capacity
Low power loss , high efficiency
Low Forward Voltage Drop
125°C Operating Junction Temperature
ORDERING SPECIFICATIONS
Part No.
SBD20C60T
SBD20C60F
Package
TO-220-3L
TO-220F-3L
Marking
SBD20C60T
SBD20C60F
Material
Pb free
Pb free
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge [email protected]
Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
60
20
150
-40~125
-40~125
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Symbol
RθJC
Value
2.0
Packing
Tube
Tube
Unit
V
A
A
°C
°C
Unit
°C/W
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.22
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SBD20C60T Даташит, Описание, Даташиты
SBD20C60T/F_Datasheet
ELECTRICAL CHARACTERISTICS (Per Leg)
Parameters
Forward Voltage
Reverse Current
Symbol
VF
VF
VF
VF
IR
IR
Test Condition
IF=10 ATJ=25°C
IF =10 ATJ =125°C
IF =20 ATJ =25°C
IF =20 ATJ =125°C
VR=60VTJ =25°C
VR=60VTJ =125°C
Min.
--
--
--
--
--
--
Max.
0.71
0.61
0.85
0.71
100
15
Unit
V
V
V
V
μA
mA
CHARACTERISTIC CURVES
Figure 1. Typical forward voltage
100
Figure 2. Typical reverse current
100
10
1
25
0.1 75
125
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF(V)
10
1 25
100
0.1 125
0.01
0.001
0
10 20 30 40
VR(V)
50 60 70
10000
Figure 3. Typical capacitance
1000
f=1MHz
100
0.1 1 10
VR(V)
100
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.22
Page 2 of 5









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SBD20C60T Даташит, Описание, Даташиты
PACKAGE OUTLINE
TO-220-3L
SBD20C60T/F_Datasheet
UNIT: mm
TO-220F-3L
UNIT: mm
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2010.10.22
Page 3 of 5










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Номер в каталогеОписаниеПроизводители
SBD20C60F60V SCHOTTKY RECTIFIERSilan Microelectronics
Silan Microelectronics
SBD20C60T60V SCHOTTKY RECTIFIERSilan Microelectronics
Silan Microelectronics

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