DataSheet26.com

NTD4856N PDF даташит

Спецификация NTD4856N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD4856N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

8 Pages
scroll

No Preview Available !

NTD4856N Даташит, Описание, Даташиты
NTD4856N, NVD4856N
Power MOSFET
25 V, 89 A, Single N−Channel, DPAK/IPAK
Features
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Applications
VCORE Applications
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Steady
State
Continuous Drain
Current RqJC
(Note 1)
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
tp=10ms
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
TC = 25°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
ID
PD
IDM
25
±20
16.8
13.0
2.14
13.3
10.3
1.33
89
69
60
179
V
V
A
W
A
W
A
W
A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
45
−55 to
+175
50
6
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 19 Apk, L = 1.0 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
180.5 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
V(BR)DSS
25 V
RDS(ON) MAX
4.7 mW @ 10 V
6.8 mW @ 4.5 V
D
ID MAX
89 A
N−Channel
G
S
4
4
4
12
3
DPAK
CASE 369AA
(Bent Lead)
STYLE 2
1 23
1
2
3
3 IPAK
CASE 369AC
(Straight Lead)
IPAK
CASE 369D
(Straight Lead
DPAK) STYLE 2
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS 4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
A = Assembly Location*
Y = Year
WW = Work Week
4856N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 3
1
Publication Order Number:
NTD4856N/D









No Preview Available !

NTD4856N Даташит, Описание, Даташиты
NTD4856N, NVD4856N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.5
3.5
70
113
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
25
VGS = 0 V,
VDS = 20 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
V
23 mV/°C
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 250 mA
1.45
5.9
2.5 V
mV/°C
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 30 A
VDS = 1.5 V, ID = 15 A
3.9 4.7
mW
5.3 6.8
73 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 4)
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
VGS = 0 V, f = 1.0 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V, ID = 30 A
VGS = 10 V, VDS = 15 V, ID = 30 A
2241
567
279
18
3.4
6.7
6.6
38
27
pF
nC
nC
Turn−On Delay Time
td(ON)
15.7
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
22.5
ns
18.6
Fall Time
tf
7.5
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width 300 ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2









No Preview Available !

NTD4856N Даташит, Описание, Даташиты
NTD4856N, NVD4856N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter
Symbol
Test Condition
Min Typ Max Unit
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
8.7
17.5
ns
27.2
4.0
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
VSD
tRR
ta
tb
QRR
VGS = 0 V,
IS = 30 A
TJ = 25°C
TJ = 125°C
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
0.87 1.2
0.72
18.7
9.3
9.4
8.0
V
ns
nC
Source Inductance
LS
2.49 nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD TA = 25°C
1.88
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6 W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: pulse width 300 ms, duty cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3










Скачать PDF:

[ NTD4856N.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTD4856NPower MOSFET ( Transistor )ON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск