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PDF HMC1127 Data sheet ( Hoja de datos )
| Número de pieza | HMC1127 | |
| Descripción | GaAs pHEMT MMIC High Gain POWER AMPLIFIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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v00.1214
Typical Applications
The HMC1127 is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Functional Diagram
HMC1127
GaAs pHEMT MMIC High Gain
POWER AMPLIFIER, 2 - 50 GHz
Features
P1dB Output Power: 12.5 dBm
Psat Output Power: 17.5 dBm
Gain: 14.5 dB
Output IP3: 23 dBm
Supply Voltage: +5V @ 80 mA
50 Ohm Matched Input/Output
Die Size: 2.7 x 1.45 x 0.1 mm
General Description
The HMC1127 is a GaAs pHEMT MMIC Distrib-
uted Power Amplifier which operates between 2
and 50 GHz. The amplifier provides 14.5 dB of gain,
23 dBm output IP3 and 12.5 dBm of output power at
1 dB gain compression while requiring 80 mA from
a +5V supply. The HMC1127 amplifier I/Os are
internally matched to 50 Ohms facilitating integra-
tion into Multi-Chip-Modules (MCMs). All data is
taken with the chip connected via two 0.025 mm
(1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = +5V, Vgg2 = +1.4V, Idd = 80 mA [1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Noise Figure
Supply Current
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
2-8
8 - 30
30 - 40
40 - 50
12 15
10.5 13.5
11.5 14.5
11.5 14.5
.005
.006
.011
.012
17 18 20 13
10 20 17 13
11 14
9.5 12.5
9 12
8.5 10.5
18.5
17.5
17
15
25.5
23
22
18
8 6.5 6 6.5
80 80 80 80
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 80 mA typical.
[2] Measurement taken at Pout / tone = 0 dBm.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
1
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
1 page  
v00.1214
HMC1127
GaAs pHEMT MMIC High Gain
POWER AMPLIFIER, 2 - 50 GHz
Output IM3 @ Vdd = +7V [1]
70
60
50
40
30
20
10
0
-5 -2 1
4
Pout/TONE (dBm)
2 GHz
10 GHz
20 GHz
7 10
30 GHz
40 GHz
50 GHz
Output IM3 @ Vdd = +8V [1]
70
60
50
40
30
20
10
0
-5 -2 1 4
Pout/TONE (dBm)
2 GHz
10 GHz
20 GHz
7 10
30 GHz
40 GHz
50 GHz
Noise Figure vs. Temperature
12
11
10
9
8
7
6
5
4
3
2
6 10 14 18 22 26 30 34 38 42 46 50
FREQUENCY (GHz)
+25 C
+85 C
-55 C
Noise Figure vs. Supply Voltage [1]
12
11
10
9
8
7
6
5
4
3
2
6 10 14 18 22 26 30 34 38 42 46 50
FREQUENCY (GHz)
+4V +6V +8V
+5V +7V
Noise Figure vs. Supply Current [2]
12
11
10
9
8
7
6
5
4
3
2 6 10 14 18 22 26 30 34 38 42 46 50
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
5 10 15 20 25 30 35 40 45 50
FREQUENCY (GHz)
80 mA
90 mA
100 mA
110 mA
+25 C
+85 C
-55 C
[1] For Vdd= +4V, Vgg2=+1.4V, for Vdd= +5V, Vgg2= +1.4V, for Vdd= +6V Vgg2= +2V, for Vdd= +7 Vgg2= +3V, for Vdd=+8V Vgg2= +3.6V
[2] Vdd= +5V, Vgg2= +1.4V.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HMC1127.PDF ] | |
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