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H4N60F PDF даташит

Спецификация H4N60F изготовлена ​​​​«HAOHAI» и имеет функцию, называемую «N-Channel MOSFET».

Детали детали

Номер произв H4N60F
Описание N-Channel MOSFET
Производители HAOHAI
логотип HAOHAI логотип 

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H4N60F Даташит, Описание, Даташиты
4A, 600V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP4N60C
FQPF4N60C
公司型号
H4N60P
H4N60F
通俗命名
4N60
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
4N60 Series
N-Channel MOSFET
每盒数量
每箱数量
1000Pcs
5000Pcs
Features
 Originative New Design
 Superior Avalanche Rugged Technology
 Robust Gate Oxide Technology
 Very Low Intrinsic Capacitances
 Excellent Switching Characteristics
 Unrivalled Gate Charge: 15nC(Typ.)
 Extended Safe Operating Area
 Lower RDS(ON): 2.0(Typ.) @ VGS=10V
 100% Avalanche Tested
 Package: TO-220AB & TO-220F
ID=4A
BVDSS=600V
RDS(on)=2.0
■特点
 导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
 开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
 各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
 风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
 TO-220P TO-220AB(半塑封)
 TO-220F TO-220FP(全塑封)
4N60 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol:
1G
3S
Absolute Maximum RatingsTC=25unless otherwise specified
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
IAR
EAR
Drain-Source Voltage
Drain CurrentContinuous (TC=25)
Drain CurrenContinuous (TC=100)
Drain Current – Pulsed (Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25)
Power Dissipation - Derate above 25
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
  * Drain current limited by maximum junction temperature TO-220F
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 1.25
0.5 --
-- 62.5
Value
TO-220AB TO-220F
600 600
4.0 4.0*
2.5 2.5*
16 16*
±30 ±30
240 240
4.0 4.0
10 10
5.5 5.5
100 33
0.8 0.26
-50 ~ +150
300
TO-220F
Typ. Max.
-- 3.79
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
1页 共7
致力於中國功率器件優秀供應商
H4N60C_PF_BUB









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H4N60F Даташит, Описание, Даташиты
4A, 600V, N沟道 场效应晶体管 产品参数规格书
Electrical CharacteristicsTC=25unless otherwise specified
Symbol
Parameter
Test Conditions
4N60 Series
N-Channel MOSFET
Min. Typ. Max. Units
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=VGS, ID=250μA
VGS=10V, ID=2A
Off Characteristics
BVDSS
BVDSS/TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS=0V, ID=250μA
ID=250μA, Referenced to 25
VDS=600V, VGS=0V
VDS=480V, TC=125
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
2.5
--
600
--
--
--
--
--
--
2.0
--
0.65
--
--
--
--
4.5
2.5
--
--
1
10
100
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=25V
VGS=0V
f=1.0MHz
-- 600 780
-- 65 85
-- 11 14
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=300V
ID=4A, RG=25
(Note 4,5)
VDS=480V
ID=4A, VGS=10V
(Note 4,5)
-- 15 30
-- 40 80
-- 50 100
-- 40 80
-- 15 20
-- 3.4 --
-- 6.7 --
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
-- -- 4.0
ISM
Pulsed Source-Drain Diode Forward Current
-- -- 16
VSD Source-Drain Diode Forward Voltage
IS=4A, VGS=0V
-- -- 1.4
trr Reverse Recovery Time
IS=4A, VGS=0V
-- 300 --
Qrr
Reverse Recovery Charge
diF/dt=100μA/μs (Note 4)
-- 2.2 --
  Notes:
  1. Repetitive Rating: Pulse width limited by maximum junction temperature ;  2. L=27.5mH, I AS =4A, V DD =50V, R G =25, Starting T J =25
  3. I SD 4A, di/dt 200A/μS, V DD BVDSS, Starting T J =25 ℃; 4. Pulse Test: Pulse Width 300μS, Duty Cycle 2% 5. Essentially Independent of Operating Temperature
V
V
V/
μA
nA
pF
nS
nC
A
V
nS
μC
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
2页 共7
致力於中國功率器件優秀供應商
H4N60C_PF_BUB









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H4N60F Даташит, Описание, Даташиты
4A, 600V, N沟道 场效应晶体管 产品参数规格书
Typical Performance Characteristics
Fig-1. On Region Characteristics
4N60 Series
N-Channel MOSFET
Fig-2. Transfer Characteristics
VDS, Drain-Source Voltage [V]
Fig-3. On Resistance Variation vs
Fi111g-3. Drain Current and Gate Voltage
VGS, Gate-Source Voltage [V]
Fig-4. Body Diode Forward Voltage Variation
Fig-4. with Source Current and Temperature
ID, Drain Current [A]
Fig-5. Capacitance Characteristics
VSD, Source-Drain Voltage [V]
Fig-6. Gate Charge Characteristics
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
3页 共7
致力於中國功率器件優秀供應商
H4N60C_PF_BUB










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