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HD8205A PDF даташит

Спецификация HD8205A изготовлена ​​​​«HI-DEVICE» и имеет функцию, называемую «N-Channel Enhancement Mode Power MOSFET».

Детали детали

Номер произв HD8205A
Описание N-Channel Enhancement Mode Power MOSFET
Производители HI-DEVICE
логотип HI-DEVICE логотип 

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HD8205A Даташит, Описание, Даташиты
HD8205A
N-Channel Enhancement Mode Power MOSFET
Description
The HD8205A uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V, ID = 6A
RDS(ON) < 34m@ VGS=2.5V
RDS(ON) < 24m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D1
G1
G2
D2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
Battery protection
Load switch
Power management
TSSOP-8 top view
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=19.5V,VGS=0V
Min Typ Max Unit
20 21
--
-
1
V
μA
1









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HD8205A Даташит, Описание, Даташиты
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
VGS=±10V,VDS=0V
VDS=VGS,ID=250μA
VGS=4.5V, ID=4.5A
VGS=2.5V, ID=3.5A
VDS=5V,ID=4.5A
VDS=8V,VGS=0V,
F=1.0MHz
VDD=10V,ID=1A
VGS=4.5V,RGEN=6
VDS=10V,ID=6A,
VGS=4.5V
VGS=0V,IS=1.7A
HD8205A
- - ±100 nA
0.5 0.7
- 20
- 26
- 10
1.2
24
34
-
V
m
m
S
- 600
- 330
- 140
-
-
-
PF
PF
PF
- 10 20
- 11 25
- 35 70
- 30 60
- 10 15
- 2.3
-
- 1.5
-
nS
nS
nS
nS
nC
nC
nC
- 0.75 1.2
- - 1.7
V
A
2









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HD8205A Даташит, Описание, Даташиты
HD8205A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Vdd
Rl
Vin
D Vout
Vgs Rgen
G
td(on)
VOUT
ton toff
tr
td(off)
tf
90%
INVERTED
10%
90%
10%
90%
S
VIN
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
3










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