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Datasheet C3199 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | C3199 | NPN Transistor, 2SC3199 2SC3199 NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
Absolute Maximum Ra | ETC | data |
2 | C3199 | NPN Plastic-Encapsulated Transistor Elektronische Bauelemente
2SC3199
0.15 A , 50 V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
TO-92
High Current Capability High DC Current Gain Small Package
APPLICATIONS
Audio Amplifier Applications A | SeCoS | transistor |
3 | C3199 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC3199 TRANSISTOR (NPN)
FEATURES z High Current Capability z High DC Current Gain z Small Package
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
APPLICATIONS
z Audio Amplifier Applications z AM Amplifier Applica | JCST | transistor |
4 | C3199 | NPN SILICON TRANSISTOR ***********************************************************************************
2SC3199
NPN SILICON TRANSISTOR
| FGX | transistor |
5 | C3199 | NPN SILICON TRANSISTOR DONG GUAN JIN SI LAI ELECTROIC CO., LTD
2SC3199
NPN SILICON TRANSISTOR
| JSL | transistor |
C31 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | C3101 | NPN Transistor, 2SC3101 Mitsubishi Electronics data | | |
2 | C3102 | NPN Transistor, 2SC3102 Mitsubishi Electric Semiconductor data | | |
3 | C3112 | NPN Transistor, 2SC3112 2SC3112
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3112
For Audio Amplifier and Switching Applications
• • • High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
C Toshiba Semiconductor data | | |
4 | C3113 | NPN Transistor, 2SC3113 Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Free Datasheet http://www.datasheet-pdf.com/
Toshiba Semiconductor data | | |
5 | C3114 | NPN Transistor, 2SC3114 Ordering number:ENN1047C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1246/2SC3114
www.datasheet4u.com
High-VEBO, AF Amp Applications
Features
· High VEBO. · Wide ASO and highly resistant to breakdown.
Package Dimensions
unit:mm 2003B
[2SA1246/2SC3114]
5.0 4.0 4.0
0.45 0.5
0.45 0.44
0.6 Sanyo Semicon Device data | | |
6 | C3116 | NPN Transistor, 2SC3116 Ordering number:ENN1032B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1248/2SC3116
160V/700mA Switching Applications
Uses
· Color TV sound output, converters, inverters.
Features
· High breakdown voltage. · Large current capacity. · Using MBIT process
Package Dimensions
unit:mm
2009B
[2 Sanyo data | | |
7 | C3117 | NPN Transistor, 2SC3117 Ordering number:ENN1060C
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1249/2SC3117
160V/1.5A Switching Applications
Uses
· Color TV sound output, converters, inverters.
Package Dimensions
unit:mm 2009B
[2SA1249/2SC3117]
8.0 4.0 2.7
Features
· High breakdown voltage. · L Sanyo Semicon Device data | |
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