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NTE336 PDF даташит

Спецификация NTE336 изготовлена ​​​​«NTE» и имеет функцию, называемую «Silicon NPN Transistor».

Детали детали

Номер произв NTE336
Описание Silicon NPN Transistor
Производители NTE
логотип NTE логотип 

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NTE336 Даташит, Описание, Даташиты
NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency
= 50%
D Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total
DDeveircaeteDaisbsoipvaeti2o5n°C(TC.
=
..
.+.2.5.°.C.).,.P. D. .
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. . . 250W
1.43W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65° to +150°C
Thermal Resistance, JunctiontoCase, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions Min
Typ Max Unit
OFF Characteristics
CollectorEmitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0
18
V
V(BR)CES IC = 50mA, VBE = 0 36 − − V
EmitterBase Breakdown Voltage
V(BR)EBO IE = 10mA, IC = 0
4
V









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NTE336 Даташит, Описание, Даташиты
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions Min
Typ
Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
hFE IC = 5A, VCE = 5V
10
150
Output Capacitance
Cob VCB = 15V, IE = 0,
f = 1MHz
250 pF
Functional Tests
CommonEmitter Amplifier Power Gain Gpe VCC = 12.5V,
Collector Efficiency
η
POUT = 80W,
f = 30MHz
Series Equivalent Input Impedance
Zin
Series Equivalent Output Impedance
Zout
Parallel Equivalent Input Impedance
12
50
.938 j.341
1.16 j.201
1.06
1817pF
dB
%
Parallel Equivalent Output Impedance
1.19
777pF
NTE335
NTE336
.250
(6.35)
.225 (5.72)
.725 (18.42)
EC
.127 (3.17) Dia
(2 Holes)
BE
1.061 (25.95)
.480 (12.1) Dia
.065
(1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385
(9.8)
Dia
.005 (0.15)
832NC3A
Wrench Flat
.168 (4.27) .750
(19.05)










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