NTE336 PDF даташит
Спецификация NTE336 изготовлена «NTE» и имеет функцию, называемую «Silicon NPN Transistor». |
|
Детали детали
Номер произв | NTE336 |
Описание | Silicon NPN Transistor |
Производители | NTE |
логотип |
2 Pages
No Preview Available ! |
NTE335 & NTE336
Silicon NPN Transistor
RF Power Output
Description:
The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications
in industrial, commercial and amateur radio equipment to 30MHz.
Features:
D Specified 12.5V, 30MHz Characteristics:
Output Power = 80W
Minimum Gain = 12dB
Efficiency
= 50%
D Available in Two Different Package Designs:
NTE335 (W52N, Flange Mount)
NTE336 (T93D, Stud Mount)
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Total
DDeveircaeteDaisbsoipvaeti2o5n°C(TC.
=
..
.+.2.5.°.C.).,.P. D. .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . . 250W
1.43W/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions Min
Typ Max Unit
OFF Characteristics
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0
18
−
−V
V(BR)CES IC = 50mA, VBE = 0 36 − − V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10mA, IC = 0
4
−
−V
No Preview Available ! |
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol Test Conditions Min
Typ
Max Unit
ON Characteristics
DC Current Gain
Dynamic Characteristics
hFE IC = 5A, VCE = 5V
10
− 150
Output Capacitance
Cob VCB = 15V, IE = 0,
f = 1MHz
−
− 250 pF
Functional Tests
Common−Emitter Amplifier Power Gain Gpe VCC = 12.5V,
Collector Efficiency
η
POUT = 80W,
f = 30MHz
Series Equivalent Input Impedance
Zin
Series Equivalent Output Impedance
Zout
Parallel Equivalent Input Impedance
−
12 −
50 −
− .938 − j.341
− 1.16 − j.201
− 1.06Ω
1817pF
−
−
−
−
−
dB
%
Ω
Ω
Parallel Equivalent Output Impedance −
− 1.19Ω −
777pF
NTE335
NTE336
.250
(6.35)
.225 (5.72)
.725 (18.42)
EC
.127 (3.17) Dia
(2 Holes)
BE
1.061 (25.95)
.480 (12.1) Dia
.065
(1.68)
.975 (24.77)
Ceramic Cap
.260
(6.6)
.095 (2.42)
1.040 (26.4) Max
.520 (13.2)
C
.230
(5.84)
E
E
.100 (2.54)
B
.385
(9.8)
Dia
.005 (0.15)
8−32−NC−3A
Wrench Flat
.168 (4.27) .750
(19.05)
Скачать PDF:
[ NTE336.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NTE330 | Germanium PNP Transistor High Power Switch | NTE |
NTE3300 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3301 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
NTE3302 | Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch | NTE |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |