CFF8N80 PDF даташит
Спецификация CFF8N80 изготовлена «CRE» и имеет функцию, называемую «N-Channel MOSFET». |
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Детали детали
Номер произв | CFF8N80 |
Описание | N-Channel MOSFET |
Производители | CRE |
логотип |
6 Pages
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7.8 Amps,800Volts
N-Channel MOSFET
■ Description
The HX8N80(C) N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
� RDS(ON) = 1.75 Ω@VGS = 10 V
� Low gate charge ( typical 27nC)
� High ruggedness
� Fast switching capability
� Avalanche energy specified
� Improved dv/dt capability
■ Symbol
CFF/P8N80
■ Ordering Information
Order Number
Normal
Lead Free Plating
HX8N80(C)-TA3-T
HX8N80(C)L-TA3-T
HX8N80(C)-TF3-T
HX8N80(C)L-TF3-T
Note:Pin Assignment: G:Gate D:Drain S:Source
HX8N80(C)L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
Package
TO-220
TO-220F
Pin Assignment
123
GD S
GD S
Packing
Tube
Tube
(1)T:Tube,R:Tape Reel
(2)TA3:TO-220,TF3:TO-220F
(3)L:Lead Free Plating Blank:Pb/Sn
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
Ratings
TO-220 TO-220F
Drain-Source Voltage
VDSS
800
Gate-Source Voltage
Drain Currenet Continuous
Tc=25℃
Tc=100℃
Drain Current Pulsed
(Note 1)
VGSS
ID
IDP
7.8
4.5
26.4
±30
7.8*
4.5*
26.4*
Avalanche Energy
Repetitive (Note 1)
Single Pulse (Note 2)
EAR
EAS
6.6
580
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
Total Power Dissipation
Tc=25℃
Derate above 25℃
PD
167 56
1.33 0.44
Junction Temperature
TJ +150
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
1
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Storage Temperature
*Drain current limited by maximum junction temperature.
■ Thermal Characteristics
Parameter
Thermal Resistance Junction-Ambient
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance Junction-Case
CFF/P8N80
TSTG
-55~+150
℃
Symbol
RthJA
RthCS
RthJC
Ratings
TO-220
TO-220F
62.5
0.5 --
0.75 2.25
Units
℃/W
■ Electrical Characteristics(TJ=25℃,unless Otherwise specified.)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
Continuous Drain-Source Current
Pulsed Drain-Source Current
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Conditions Min Typ Max Units
BVDSS
VGS=0V,ID=250μA
800
--
--
V
VDS=800V,VGS=0V
--
--
10 μA
IDSS
VDS=640V,TC=125℃
--
-- 100 μA
VGS=30V,VDS=0V -- -- 100 nA
IGSS
VGS=-30V,VDS=0V
--
-- -100 nA
△BVDSS/△TJ
ID=250μA
-- 0.93 -- V/℃
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VSD
ISD
ISM
tRR
QRR
VDS=VGS, ID=250μA
3.0
--
5.0
V
VGS=10V,ID=3.9A
-- 1.57 1.75 Ω
VDS=25V,VGS=0V,
f=1MHZ
-- 1290 1680 pF
-- 120 155 pF
-- 10 13 pF
VDD=400V,ID=7.8A,
RG=25Ω
(Note 4, 5)
VDS=640V, ID=7.8A
VGS=10V
(Note 4, 5)
--
--
--
--
--
--
--
35 80
100 210
50 110
60 130
27 35
8.2 --
11 --
ns
ns
ns
ns
nC
nC
nC
VGS=0V,ISD=7.8A
ISD=7.8A,
dISD/dt=100A/μs
(Note 4)
--
--
--
--
--
-- 1.4
-- 7.8
-- 26.4
650 --
7.0 --
V
A
A
ns
μC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=25 mH, IAS = 7.8A, VDD = 50V, RG=25Ω,Starting TJ=25°C
3. ISD≤7.8 A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25°C
4. Pulse Test : Pulse width ≤300μs, Duty cycle≤2%
5. Essentially independent of operating temperature
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
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■ Typical Characteristics
CFF/P8N80
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 5. Capacitance Characteristics
7.8A
Figure 6. Gate Charge Characteristics
天津环鑫科技发展有限公司
TIANJIN HUANXIN TECHNOLOGY DEVELOPMENT CO., LTD
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CFF8N80 | N-Channel MOSFET | CRE |
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