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C4497 PDF даташит

Спецификация C4497 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC4497».

Детали детали

Номер произв C4497
Описание NPN Transistor - 2SC4497
Производители Toshiba
логотип Toshiba логотип 

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C4497 Даташит, Описание, Даташиты
2SC4497
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC4497
High Voltage Control Applications
Unit: mm
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 3 pF (typ.)
Complementary to 2SA1721
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
300
300
6
100
20
200
150
55~150
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.012 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01









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C4497 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
IEBO
V (BR) CBO
V (BR) CEO
VCB = 300 V, IE = 0
VEB = 6 V, IC = 0
IC = 0.1 mA, IE = 0
IC = 1 mA, IB = 0
hFE (1)
VCE = 10 V, IC = 20 mA
(Note)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCE = 10 V, IC = 1 mA
IC = 20 mA, IB = 2 mA
IC = 20 mA, IB = 2 mA
VCE = 10 V, IC = 10 mA
VCB = 20 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 30~90, O: 50~150
2SC4497
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
300
V
300
V
30 150
20 ⎯ ⎯
⎯ ⎯ 0.5 V
⎯ ⎯ 1.2 V
70 MHz
3
4 pF
2 2007-11-01









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C4497 Даташит, Описание, Даташиты
2SC4497
3 2007-11-01










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