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HBN2412S6R PDF даташит

Спецификация HBN2412S6R изготовлена ​​​​«Cystech Electonics» и имеет функцию, называемую «General Purpose NPN Epitaxial Planar Transistors».

Детали детали

Номер произв HBN2412S6R
Описание General Purpose NPN Epitaxial Planar Transistors
Производители Cystech Electonics
логотип Cystech Electonics логотип 

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HBN2412S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
(dual transistors)
HBN2412S6R
Spec. No. : C202S6R
Issued Date : 2003.06.11
Revised Date : 2006.01.19
Page No. : 1/5
Features
Two BTC2412 chips in a SOT-363R package.
Mounting possible with SOT-323 automatic mounting machines.
Transistor elements are independent, eliminating interference.
Mounting cost and area can be cut in half.
Low Cob. Typ. Cob=2.0pF
Complementary to HBP1037S6R
Pb-free package
Equivalent Circuit
Outline
HBN2412S6R
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
60
40
6
200
200(total)
150
-55~+150
(Note)
Note : 150mW per element must not be exceeded.
Unit
V
V
V
mA
mW
°C
°C
HBN2412S6R
CYStek Product Specification









No Preview Available !

HBN2412S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Spec. No. : C202S6R
Issued Date : 2003.06.11
Revised Date : 2006.01.19
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
hFE
fT
Cob
Min.
60
40
6
-
-
-
-
200
25
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.3
1
560
-
-
4
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=50µA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width 380µs, Duty Cycle2%
Ordering Information
Device
HBN2412S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
MA
HBN2412S6R
CYStek Product Specification









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HBN2412S6R Даташит, Описание, Даташиты
CYStech Electronics Corp.
Characteristic Curves
Spec. No. : C202S6R
Issued Date : 2003.06.11
Revised Date : 2006.01.19
Page No. : 3/5
Current Gain vs Collector Current
1000
HFE@VCE=1V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100 100
10
0.1
1 10 100
Collector Current ---IC(mA)
1000
Saturation Voltage vs Collector Current
10000
VBE(SAT)@IC=10IB
1000
10
0.1
10000
1 10 100
Collector Current---IC(mA)
1000
Cutoff Frequency vs Collector Current
VCE=20V
1000
100
0.1
250
200
150
100
50
0
0
1 10 100
Collector Current ---IC(mA)
Power Derating Curves
Dual
Single
50 100 150
Ambient Temperature ---Ta(℃ )
1000
200
100
1
10
Collector Current---IC(mA)
100
HBN2412S6R
CYStek Product Specification










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Номер в каталогеОписаниеПроизводители
HBN2412S6RGeneral Purpose NPN Epitaxial Planar TransistorsCystech Electonics
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