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PDF NSBA124EDXV6 Data sheet ( Hoja de datos )
| Número de pieza | NSBA124EDXV6 | |
| Descripción | Dual PNP Bias Resistor Transistors | |
| Fabricantes | ON Semiconductor | |
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MUN5112DW1,
NSBA124EDXV6,
NSBA124EDP6
Dual PNP Bias Resistor
Transistors
R1 = 22 kW, R2 = 22 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
• S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(TA = 25°C, common for Q1 and Q2, unless otherwise noted)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
Package
Shipping†
MUN5112DW1T1G,
SMUN5112DW1T1G
SOT−363
3,000 / Tape & Reel
NSBA124EDXV6T1G
SOT−563
4,000 / Tape & Reel
NSBA124EDP6T5G
SOT−963
8,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
1
http://onsemi.com
PIN CONNECTIONS
(3) (2) (1)
R1
Q1
R2 R1
(4) (5)
R2
Q2
(6)
MARKING DIAGRAMS
6
0B M G
G
1
SOT−363
CASE 419B
0B M G
1G
SOT−563
CASE 463A
mMG
1G
SOT−963
CASE 527AD
0B/m
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Publication Order Number:
DTA124ED/D
1 page  
MUN5112DW1, NSBA124EDXV6, NSBA124EDP6
1
IC/IB = 10
TYPICAL CHARACTERISTICS
NSBA124EDP6
1000
150°C
25°C
25°C
0.1
150°C
100 −55°C
−55°C
10
0.01
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) vs. IC
VCE = 10 V
1
50 0.1
1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
7 100
f = 10 kHz
150°C
6 IE = 0 A
5
TA = 25°C
10
−55°C
25°C
4
1
3
2 0.1
1 VO = 5 V
0 0.01
0 10 20 30 40 50
02
46
8 10 12 14
VR, REVERSE VOLTAGE (V)
Figure 9. Output Capacitance
Vin, INPUT VOLTAGE (V)
Figure 10. Output Current vs. Input Voltage
100
25°C
10
−55°C
1 150°C
VO = 0.2 V
0.1
0 10 20 30 40 50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NSBA124EDXV6.PDF ] | |
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