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PDF HAL300 Data sheet ( Hoja de datos )
| Número de pieza | HAL300 | |
| Descripción | Differential Hall Effect Sensor IC | |
| Fabricantes | Micronas | |
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MICRONAS
HAL300
Differential Hall Effect
Sensor IC
Edition July 15, 1998
6251-345-1DS
MICRONAS
1 page  
HAL300
Absolute Maximum Ratings
Symbol
Parameter
Pin No. Min.
VDD
–VP
–IDD
IDDZ
Supply Voltage
Test Voltage for Supply
Reverse Supply Current
Supply Current through
Protection Device
1 –15
1 –242)
1–
1 –2003)
VO
IO
IOmax
IOZ
Output Voltage
Continuous Output On Current
Peak Output On Current
Output Current through
Protection Device
3
3
3
3
–0.3
–
–
–2003)
TS Storage Temperature Range
–65
TJ Junction Temperature Range
–40
–40
1) as long as TJmax is not exceeded
2) with a 220 Ω series resistance at pin 1 corresponding to test circuit 1
3) t < 2 ms
4) t < 1000h
Max.
281)
–
501)
2003)
281)
30
2503)
2003)
150
150
1704)
Unit
V
V
mA
mA
V
mA
mA
mA
°C
°C
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
Recommended Operating Conditions
Symbol
VDD
IO
VO
Rv
Parameter
Supply Voltage
Continuous Output On Current
Output Voltage
Series Resistor
Pin No.
1
3
3
1
Min.
4.5
–
–
–
Max.
24
20
24
270
Unit
V
mA
V
Ω
Micronas
5
5 Page 
HAL300
µA
102
VDD = 5 V
101
IOH
100
10–1
TA = 125 °C
10–2
10–3
TA = 75 °C
10–4
TA = 25 °C
10–5
20 22 24 26 28 30 V
VOH
Fig. 20: Typical output leakage current
versus output voltage
Application Notes
Mechanical stress can change the sensitivity of the Hall
plates and an offset of the magnetic switching points
may result. External mechanical stress to the package
can influence the magnetic parameters if the sensor is
used under back-biased applications. This piezo sensi-
tivity of the sensor IC cannot be completely compen-
sated for by the switching offset compensation tech-
nique.
For back-biased applications, the HAL 320 is recom-
mended. In such cases, please contact our Application
Department. They will provide assistance in avoiding
applications which may induce stress to the ICs. This
stress may cause drifts of the magnetic parameters indi-
cated in this data sheet.
For electromagnetic immunity, it is recommended to ap-
ply a 4.7 nF capacitor between VDD (pin 1) and Ground
(pin 2). For automotive applications, a 220 W series re-
sistor to pin 1 is recommended. Because of the IDD peak
at 4.1 V, the series resistor should not be greater than
270 Ω. The series resistor and the capacitor should be
placed as close as possible to the IC.
Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient tem-
perature TA).
TJ = TA + ∆T
At static conditions, the following equations are valid:
– for SOT-89A: ∆T = IDD * VDD * RthJSB
– for TO-92UA: ∆T = IDD * VDD * RthJA
For typical values, use the typical parameters. For worst
case calculation, use the max. parameters for IDD and
Rth, and the max. value for VDD from the application.
Test Circuits for Electromagnetic Compatibility
Test pulses VEMC corresponding to DIN 40839.
RV
220 Ω
VEMC
VP
1 VDD
4.7 nF
2 GND
RL 1.2 kΩ
OUT
3
20 pF
Fig. 21: Test circuit 2: test procedure for class A
RV
220 Ω
VEMC
1 VDD
4.7 nF
2 GND
RL
OUT
3
680 Ω
Fig. 22: Test circuit 1: test procedure for class C
Micronas
11
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet HAL300.PDF ] | |
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