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Номер произв BL-M12B883EG-XX
Описание LED DOT MATRIX
Производители BETLUX
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BL-M12B883EG-XX Даташит, Описание, Даташиты
LED DOT MATRIX
BL-M12X883 XX
Fe atures:
Ø 31.70mm (1.2”) 3.0x3.0 SQUARE dot matrix LED display.BI-COLOR
Ø Low current operation.
Ø Excellent character appearance.
Ø Easy mounting on P.C. Boards or sockets.
Ø I.C. Compatible.
Ø ROHS Compliance.
Electrical-optical characteristics: (Ta=25 )
Part No
(Test Condition: IF=20mA)
Chip
VF
Unit :V
Row Cathode
Column Anode
Row Anode
Column Cathode
Emitted Color
Material
P
(nm)
Typ Max
Iv
TYP .(mcd)
BL-M12A883SG-XX BL-M12B883SG-XX Super Red
Green
BL-M12A883EG-XX BL-M12B883EG-XX
Orange
Green
BL-M12A883DUG-XX BL-M12B883DUG-XX Ultra Red
Ultra Green
BL-M12A883UEUG-X BL-M12B883UEUG-X Ultra Orange
X X Ultra Green
AlGaInP
GaP/GaP
GaAs P/Ga
P
GaP/GaP
AlGaInP
AlGaInP
AlGaInP
AlGaInP
660
570
635
570
660
574
630
574
2.10 2.50
2.20
2.10
2.50
2.50
2.20
2.10
2.20
2.10
2.20
2.50
2.50
2.50
2.50
2.50
-XX: Surface / Lens color
Numbe r
0
Ref Surface Color
Epoxy Color
White
Water
clear
1
Black
White
diffused
2
Gray
Red
Diffused
3
Red
Green
Diffused
4
Green
Yellow
Diffused
5
Absolute maximum ratings (Ta=25°C)
Parameter
S G E D UG UE
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature TOPR
Storage Temperature TSTG
Lead Soldering Temperature
TSOL
30 30 30 30 30 30
75 80 80 75 75 65
555555
150 150 150 150 150 150
-40 to +80
-40 to +85
Ma x.260±5 for 3 sec Max.
(1.6mm from the base of the epoxy bulb)
200
195
190
195
320
250
235
250
U
nit
mA
mW
V
mA
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4
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BL-M12B883EG-XX Даташит, Описание, Даташиты
LED DOT MATRIX
BL-M12X883 XX
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4
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BL-M12B883EG-XX Даташит, Описание, Даташиты
LED DOT MATRIX
BL-M12X883 XX
Typical electrical-optical characteristics curves:
(A)
(B ) (C) ( D)
(2) (3)
(8) ( 4) (1) (6)
( 5)
1.0
(9) (10)
0.5
0
350 400 450 500 550 600 650 700 750 800 850
Wav elength(nm)
RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p)
(1) - GaAsP/GaAs 655nm/Red
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(6) - GaAlAs/GaAs 660nm/Super Red
(8) - GaAsP/GaP 610nm/Super Red
(9) - GaAlAs 880nm
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(D) - InGaAl/SiC 525nm/Ultra Green
900 950 1000
50
FO
RW 40
AR
D 30
C
U
RREN 20
T(m 10
A)
0
1 .2
8
1 64 5 2 3
1.6 2.0 2.4 2.6
3.0
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
R
ELATIVE
LUM
4.0
3.0
IN
O 2.0
US
INTEN 1.0
SITY 0
1
5
B
20 40 60 80 100
FORWARD CURRENT (mA)
RELATIVE LUMI NOUS
INTENSI TY VS. FORWARD
CURRENT
50
FO
RW
40
1
AR
D
CU
30
6
2,4,8,A
RR
EN
20
3
5
T(m
A)
10
0
20 40 60 80 100
AMBIENT TEMPERATURE Ta( )
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
REL
ATIVE
3
2
1
5
LU
M
1
42
3
IN
OU 0.5
S
IN
TE
NS
ITY
0.2
0.1-30 -20 -10 0 10 20 30 40 5 0 60 7 0
AMBIENT TEM PER ATUR E Ta( )
10
9
87
6
5
IDC
M
Ipeak
4
AX
.
M
AX.
3
3KHz
300KHz
10KH z 1KHz 100KHz
F-REFRESH R ATE
ID
C
M
A
IpeakM
X. AX
.
30KHz 3 KHz 300Hz
100KHz
10
98
7
6
10KHz 1KHz
100H z
5
4
3
22
1
1 10 100 1000 10,000
tp-PU LSE DU RATION uS
(1,2 ,3 ,4,6,8,B.D.J. K)
1
1 10 100 1000 10,000
tp-P ULSE DU RATION uS
(5)
NOTE:25 free air temperat ure unless otherw ise sp ecifie d
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4
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