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HAT2028R PDF даташит

Спецификация HAT2028R изготовлена ​​​​«Renesas» и имеет функцию, называемую «Silicon N-Channel Power MOS FET».

Детали детали

Номер произв HAT2028R
Описание Silicon N-Channel Power MOS FET
Производители Renesas
логотип Renesas логотип 

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HAT2028R Даташит, Описание, Даташиты
HAT2028R, HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1234
24
GG
S1
MOS1
S3
MOS2
REJ03G1163-0500
(Previous: ADE-208-524C)
Rev.5.00
Sep 07, 2005
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 7









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HAT2028R Даташит, Описание, Даташиты
HAT2028R, HAT2028RJ
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
Gate to source voltage
VDSS
VGSS
60
±20
Drain current
Drain peak current
ID
ID (pulse) Note 1
4
32
Body-drain diode reverse drain current
Avalanche current
HAT2028R
IDR
IAP Note 4
4
Avalanche energy
HAT2028RJ
HAT2028R
EAR Note 4
4
Channel dissipation
Channel dissipation
HAT2028RJ
Pch Note 2
Pch Note 3
1.37
2
3
Channel temperature
Tch 150
Storage temperature
Tstg –55 to +150
Notes: 1. PW 10 µs, duty cycle 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW 10 s
4. Value at Tch = 25°C, Rg 50
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain HAT2028R
current
HAT2028RJ
Zero gate voltage drain HAT2028R
current
HAT2028RJ
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 5. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
60
V (BR) GSS ±20
IGSS — — ±10
IDSS
——
1
IDSS — — 0.1
IDSS — — —
IDSS — — 10
VGS (off) 1.3 — 2.3
RDS (on)
— 0.08 0.1
RDS (on)
— 0.12 0.16
|yfs| 3.3 5 —
Ciss — 280 —
Coss
— 150 —
Crss
— 55 —
V ID = 10 mA, VGS = 0
V IG = ±100 µA, VDS = 0
µA VGS = ±16 V, VDS = 0
µA VDS = 60 V, VGS = 0
µA
µA VDS = 48 V, VGS = 0
µA Ta = 125°C
V VDS = 10 V, ID = 1 mA
ID = 2 A, VGS = 10 V Note 5
ID = 2 A, VGS = 4 V Note 5
S ID = 2 A, VDS = 10 V Note 5
pF VDS = 10 V
pF VGS = 0
pF f = 1 MHz
td (on)
tr
td (off)
tf
VDF
trr
— 15 —
— 100 —
ns VGS = 4 V, ID = 2 A,
ns VDD 30 V
— 35 — ns
— 45 — ns
— 0.88 1.15 V IF = 4 A, VGS = 0 Note 5
— 40 — ns IF = 4 A, VGS = 0
diF/dt = 50 A/µs
Rev.5.00 Sep 07, 2005 page 2 of 7









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HAT2028R Даташит, Описание, Даташиты
HAT2028R, HAT2028RJ
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW 10 s
3.0
2.0
1.0 1 Drive Operation
0
0 50 100 150 200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20 10 V
16
12
8
8V
6V
Pulse Test
5V
4.5 V
4V
3.5 V
3V
4
VGS = 2.5 V
0
0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2 ID = 2 A
0.1 1 A
0 0.5 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Rev.5.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
100
10 µs
30
10 100 µs
3
1
0.3
0.1
OtlihmpisietearadretiboaynisRiDnDCSO(opne)raPtWion=(1P0W1mms1Ns0otes)6
Ta = 25°C
0.03 1 shot Pulse
1 Drive Operation
0.01
0.1 0.3 1 3
10 30
100
Drain to Source Voltage VDS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
20
–25°C
16
25°C
12
Tc = 75°C
8
4
VDS = 10 V
Pulse Test
0
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
VGS = 4 V
0.1
10 V
0.05
0.02
0.01
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10










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