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PDF HAT2028RJ Data sheet ( Hoja de datos )
| Número de pieza | HAT2028RJ | |
| Descripción | Silicon N-Channel Power MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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HAT2028R, HAT2028RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive Application (at Type Code “J”)
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 65
1234
24
GG
S1
MOS1
S3
MOS2
REJ03G1163-0500
(Previous: ADE-208-524C)
Rev.5.00
Sep 07, 2005
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Rev.5.00 Sep 07, 2005 page 1 of 7
1 page  
HAT2028R, HAT2028RJ
Reverse Drain Current vs.
Source to Drain Voltage
20
16
VGS = 5 V
12 0, –5 V
8
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
IAP = 4 A
VDD = 25 V
2.0 L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
4 0.5
Pulse Test
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D=
PW
T
PW
T
0.0001
10 µ 100 µ
1m
10 m 100 m
1
10 100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01 0.01
0.001
1shot pulse
0.0001
10 µ 100 µ
1m
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
PDM
D = PW
T
PW
T
10 m 100 m
1
10
Pulse Width PW (S)
100 1000 10000
Rev.5.00 Sep 07, 2005 page 5 of 7
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HAT2028RJ.PDF ] | |
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