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OPB711 PDF даташит

Спецификация OPB711 изготовлена ​​​​«OPTEK Technologies» и имеет функцию, называемую «Reflective Object Sensor».

Детали детали

Номер произв OPB711
Описание Reflective Object Sensor
Производители OPTEK Technologies
логотип OPTEK Technologies логотип 

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OPB711 Даташит, Описание, Даташиты
Reflective Object Sensor
OPB711, OPB712
Features:
Choice of phototransistor or photodarlington output
Unfocused for sensing diffuse surface
Low-cost plastic housing
Choice of filter or unfiltered
Product Photo Here
Description:
OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on
parallel axes in a black opaque plastic housing. The OPB712 consists of an infrared emitting diode and an NPN
silicon photodarlington, mounted “side-by-side” on parallel axes in a black plastic housing.
OPB711’s, emitting diode and phototransistor are encapsulated in a filtering epoxy to reduce ambient light noise.
Its phototransistor responds to radiation from the emitter only when a reflective object passes within its field of
view.
OPB712’s emitting diode and photodarlington are encapsulated in a filtering epoxy to reduce ambient light noise.
Its photodarlington responds to radiation from the emitter only when a reflective object passes within its field of
view.
Applications:
 Non-contact reflective object sensor
 Assembly line automation
 Machine automation
 Machine safety
 End of travel sensor
 Door sensor
Part
Number
OPB711
OPB712
LED Peak
Wavelength
890 nm
Sensor
Transistor
Darlington
Reflection
Distance
Inch (mm)
Lead Length /
Spacing
0.080" (2.03mm)
0.30" /
0.095" & 0.100"
“X” = 0.06” (1.5 mm)
OPB711
1
3
[ MILLIMETERS]
DIMENSIONS ARE IN:
INCHES
24
OPB712
1
3
Pin #
1
2
LED
Anode
Cathode
Pin #
3
4
Transistor
Collector
Emitter
24
RoHS
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Issue B 08/2014
Page 1 of 4









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OPB711 Даташит, Описание, Даташиты
Reflective Object Sensor
OPB711, OPB712
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage & Operating Temperature Range
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron](1)
Input Diode (See OP268 for additional information—for reference only)
Forward DC Current
Peak Forward Current (1 μs pulse width, 300 pps)
Reverse DC Voltage
Power Dissipation(2)
Output Phototransistor (OPB711),
Output Photodarlington (OPB712)
Collector-Emitter Voltage
OPB711
OPB712
Emitter-Collector Voltage
Collector DC Current
OPB711
OPB712
Power Dissipation
OPB711(2)
OPB712(3)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2) Derate linearly 1.33 mW/cm2 above 25 ° C.
(3) Derate linearly 2.08 mW/o C above 25o C.
-40° C to +85° C
260° C
50 mA
3A
2V
80 mW
24 V
15 V
5V
25 mA
125 mA
80 mW
125 mW
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Issue B 08/2014
Page 2 of 4
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com









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OPB711 Даташит, Описание, Даташиты
Reflective Object Sensor
OPB711, OPB712
Electrical Characteristics (TA=25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
TEST CONDITIONS
Input Diode (see OP168F for additional information)
VF Forward Voltage
- - 1.7 V
IR Reverse Current
- - 100 μA
Output Phototransistor (OPB711—See OP508F for additional information)
Output Photodarlington (OPB712—See OP538F for additional information)
V(BR)CEO
Collector-Emitter Breakdown Voltage
OPB711
OPB712
24
15
-
-
-
-
V
V(BR)ECO Emitter-Collector Breakdown Voltage 5 -
-
V
Collector Dark Current
ICEO OPB711
OPB712
- - 100 nA
- - 250
IF = 20 mA
VR = 2 V
IC = 100 µA
IE = 100 µA
VCE = 10 V, IF = 0, EE = 0.1 µW/cm2
Combined
VCE(SAT)
Collector-Emitter Saturation Voltage(1)(2)
OPB711
OPB712
IC(ON)
On-State Collector Current(1)(2)
OPB711
OPB712
-
-
.35
20
-
-
-
-
.4 V IF = 20 mA, IC = 50 µA, d = 0.080” (2.03 mm)
1.1
4.5 mA IF = 20 mA, VCE = 5 V, d = 0.080” (2.03 mm)
50 mA
Crosstalk
ICX OPB711(3)
OPB712(4)
- - 100 nA VCE = 5 V, IF = 20 mA (no reflecting surface)
- - 25 μA
Notes:
(1) On OPB711, D is the distance from the assembly measurement surface to the reflective surface. On OPB712, D is the distance from
the assembly face to the reflective surface.
(2) Measured using Eastman Kodak neutral white test card with 90% diffuse reflectance as a reflecting surface. Reference: Eastman
Kodak, Catalog #E 152 7795.
(3) Crosstalk (Icx) is the collector current measured with the indicated current in the input diode and with no reflective surface.
(4) All parameters were tested using pulse techniques.
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 [email protected] www.optekinc.com
Issue B 08/2014
Page 3 of 4










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