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PDF HAL2850 Data sheet ( Hoja de datos )
| Número de pieza | HAL2850 | |
| Descripción | Linear Hall-Effect Sensor | |
| Fabricantes | Micronas | |
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Hardware
Documentation
Data Sheet
HAL® 2850
Linear Hall-Effect Sensor
with PWM Output
Edition July 25, 2013
DSH000160_002EN
1 page  
DATA SHEET
HAL 2850
Linear Hall-Effect Sensor with PWM Output
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 2850 is a member of the Micronas family of
programmable linear Hall-effect sensors.
The HAL 2850 features a temperature-compensated
Hall plate with spinning current offset compensation,
an A/D converter, digital signal processing, an
EEPROM memory with redundancy and lock function
for the calibration data, and protection devices at all
pins. The internal digital signal processing is of great
benefit because analog offsets, temperature shifts,
and mechanical stress do not degrade digital signals.
The easy programmability allows a 2-point calibration
by adjusting the output signal directly to the input sig-
nal (like mechanical angle, distance, or current). Indi-
vidual adjustment of each sensor during the cus-
tomer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be com-
pensated in the final assembly.
In addition, the temperature-compensation of the Hall
IC can be fit to all common magnetic materials by pro-
gramming first- and second-order temperature coeffi-
cients of the Hall sensor sensitivity. It is also possible
to compensate offset drifts over temperature gener-
ated by the customer application with a first-order tem-
perature coefficient of the sensor offset. This enables
operation over the full temperature range with high
accuracy.
For programming purposes, the sensor features a pro-
gramming interface with a Biphase-M protocol on the
DIO pin (output).
In the application mode, the sensor provides a continu-
ous PWM signal.
1.1. Features
– High-precision linear Hall-effect sensor
– Spinning current offset compensation
– 20 bit digital signal processing
– ESD protection at DIO pin
– Reverse voltage and ESD protection at VSUP pin
– Various sensor parameter are programmable (like
offset, sensitivity, temperature coefficients, etc.)
– Non-volatile memory with redundancy and lock
function
– Programmable temperature compensation for sensi-
tivity (2nd order) and offset (1st order)
– PWM frequency programmable from 31.25 Hz up to
2 kHz
– PWM resolution between 11 bit and 16 bit depend-
ing on the PWM frequency
– The magnetic measurement range over tempera-
ture is adjustable from 24 mT up to 96 mT
– On-board diagnostics (overvoltage, output current,
overtemperature, signal path overflow)
– Power-on self-test covering all memories
– Biphase-M interface (programming mode)
– Sample accurate transmission for certain periods
(Each PWM period transmits a new Hall sample)
– Digital readout of temperature and magnetic field
information in calibration mode
– Open-drain output with slew rate control (load inde-
pendent)
– Programming and operation of multiple sensors at
the same supply line
– High immunity against mechanical stress, ESD, and
EMC
1.2. Major Applications
– Contactless potentiometers
– Angular measurements
(e.g.; torque force, pedal position, suspension level,
headlight adjustment; or valve position)
– Linear position
– Current sensing for motor control, battery manage-
ment
Micronas
July 25, 2013; DSH000160_002EN
5
5 Page 
DATA SHEET
HAL 2850
C2 Register
Table 3–6: Quadratic temperature coefficient
Parameter
c2
C2
Range
1.87 x 1010... 1.86 x 1010
128 ... 127
Resolution
8 bit
C2 is encoded as two’s complement binary.
c2 = 0---.-1-2--2-0--8-0---8- C2 9.3132 10–10
3.3. Power-on Self Test (POST)
The HAL 2850 features a built-in power-on self test to
support in system start-up test to enhanced the sys-
tem failure detection possibilities.
The power-on self test comprises the following sensor
blocks:
– RAM
– ROM
– EEPROM
The power-on self test can be activated by setting cer-
tain bits in the sensors EEPROM.
Table 3–7: Power-On Self Test Modes
EEPROM.
POST
[1] [0]
00
01
Mode / Function
POST disabled.
Memory test enabled (RAM, ROM,
EEPROM).
3.3.1. Description of POST Implementation
HAL 2850 starts the internal POST as soon as the
external supply voltage reaches the minimum supply
voltage (VSUPon). The sensor output is disabled during
the POST. It is enabled after the POST has been fin-
ished (after tstartup).
A failed POST is immediately setting the PWM output
to the minimum duty cycle.
3.3.2. RAM Test
The RAM test consists of an address test and an RAM
cell test. The address test checks if each byte of the
RAM can be singly accessed. The RAM cell test
checks if the RAM cells are capable of holding both 0
and 1.
3.3.3. ROM Test
The ROM test consists of a checksum algorithm. The
checksum is calculated by a byte by byte summation of
the entire ROM. The 8-bit checksum value is stored in
the ROM.
The checksum is calculated at the ROM test using the
entire ROM and is then compared with the stored
checksum. An error will be indicated in case that there
is a difference between stored and calculated check-
sum.
3.3.4. EEPROM Test
The EEPROM test is similar to the ROM test. The only
difference is that the checksum is calculated for the
EEPROM memory and that the 8-bit checksum is
stored in one register of the EEPROM.
3.4. Sensor Behavior in Case of External Errors
HAL 2850 shows the following behavior in case of
external errors:
– Short of output against VSUP: The sensor output is
switched off (high impedance) when an over current
occurs in the DIO output. It is re enabled before or
while the next low pulse of the PWM signal is trans-
mitted.Therefore the ECU must discard the first ris-
ing edge after a disturbance has occurred. The ECU
has to identify destroyed PWM periods by evaluat-
ing the period time
– Break of VSUP or GND line: A sensor with open-
drain output and digital interface does not need a
wire-break detection logic. The wire-break function
is covered by the pull-up resistor on the receiver.
Assuming a pull-up resistor in the receiver 100%
duty-cycle (output always high) indicates a GND or
VSUP line break. This error can be detected one
period after its occurrence
– Under or over voltage: The sensor output is
switched off (high impedance) after under or over
voltage has been detected by the sensor
– Over temperature detection: The sensor output is
switched off (high impedance) after a too high tem-
perature has been detected by the sensor
(typ.180°C). It is switched on again after the chip
temperature has reached a normal level. A build in
hysteresis avoids oscillation of the output (typ. 25°C)
Micronas
July 25, 2013; DSH000160_002EN
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet HAL2850.PDF ] | |
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