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C2910 PDF даташит

Спецификация C2910 изготовлена ​​​​«Sanyo Semicon Device» и имеет функцию, называемую «NPN Transistor - 2SC2910».

Детали детали

Номер произв C2910
Описание NPN Transistor - 2SC2910
Производители Sanyo Semicon Device
логотип Sanyo Semicon Device логотип 

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C2910 Даташит, Описание, Даташиты
Ordering number:ENN781G
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1208/2SC2910
High-Voltage Switching
Audio 80W Output Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast swtching speed.
Package Dimensions
unit:mm
2006B
[2SA1208/2SC2910]
6.0
5.0 4.7
0.5
0.6
0.5 0.5
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)10mA
VCE=(–)10V, IC=(–)10mA
VCB=(–)10V, f=1MHz
Collector-to-Emitter Saturation Voltage
VCE(sat) IC=(–)30mA, IB=(–)3mA
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows :
Rank
R
S
T
hFE 100 to 200 140 to 280 200 to 400
123
1.45 1.45
1 : Emitter
2 : Collector
3 : Base
SANYO : MP
Ratings
(–)180
(–)160
(–)5
(–)70
(–)140
900
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
min
100*
Ratings
typ
max
Unit
(–)0.1 µA
(–)0.1 µA
400*
150 MHz
(2.5)2.0
pF
0.08 0.3
(–0.14) (–0.4)
V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70502TN (KT)/71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
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C2910 Даташит, Описание, Даташиты
Continued from preceding page.
Turn-ON Time
Fall Time
Storage Time
Parameter
2SA1208/2SC2910
Symbol
Conditions
ton See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
Switching Time Test Circuit
IN 3kIB1
IB2
505k
OUT
2k
1µF 1µF
--2V 20V
IC=10IB1=--10IB2=10mA
(For PNP, the polarity is reversed.)
Ratings
min typ max
0.1
0.2
1.0
Unit
µs
µs
µs
IC -- VCE
--60
--50
--0.3mA
--0.25mA
--40 --0.2mA
--30 --0.15mA
--20 --0.1mA
2SA1208
--10
0
0
7
5
3
2
100
7
5
3
2
--0.05mA
IB=0
--10 --20 --30 --40 --50 --60 --70
Collector-to-Emitter Voltage, VCE – V ITR03005
hFE -- IC
75°C
2SA1208
VCE=--5V
25°C
--25°C
10
5 7 --1.0
2 3 5 7 --10
23
Collector Current, IC – mA
5 7 --100
ITR03007
60
50
40
30
20
10
0
0
7
5
3
2
100
7
5
3
2
IC -- VCE
0.3mA
0.25mA
0.2mA
0.15mA
0.1mA
2SC2910
0.05mA
IB=0
10 20 30 40 50 60 70
Collector-to-Emitter Voltage, VCE – V ITR03006
hFE -- IC
2SC2910
VCE=5V
75°C
25°C
--25°C
10
5 7 1.0
2 3 5 7 10
23
Collector Current, IC – mA
5 7 100
ITR03008
No.781-2/4
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C2910 Даташит, Описание, Даташиты
2SA1208/2SC2910
fT -- IC
fT -- IC
55
2SA1208
2SC2910
3
VCE=--10V
3
VCE=10V
22
100
7
5
3
2
100
7
5
3
2
10
5 7 --1.0
10
7
2 3 5 7 --10
23
Collector Current, IC – mA
Cob -- VCB
5 7 --100
ITR03009
2SA1208
f=1MHz
5
10
5 7 1.0
10
7
2 3 5 7 10
23
Collector Current, IC – mA
Cob -- VCB
5 7 100
ITR03010
2SC2910
f=1MHz
5
33
22
1.0
7
5
2
2
--1000
7
5
3 5 7 --10
23
5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03011
VCE(sat) -- IC
2SA1208
IC / IB=10
3
2
--100
7
5
25°C
75°C
--25°C
3
5 7 --1.0
--80
--70
2 3 5 7 --10
23
Collector Current, IC – mA
IC -- VBE
5 7 --100
ITR03013
2SA1208
VCE=--5V
--60
--50
--40
--30
--20
--10
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE – V ITR03015
1.0
7
5
2
2
1000
7
5
3 5 7 10
23
5 7 100
Collector-to-Base Voltage, VCB -- V ITR03012
VCE(sat) -- IC
2SC2910
IC / IB=10
3
2
100
7
5
3
5 7 1.0
80
70
25°C
75°C
--25°C
2 3 5 7 10
23
Collector Current, IC – mA
IC -- VBE
5 7 100
ITR03014
2SC2910
VCE=5V
60
50
40
30
20
10
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03016
No.781-3/4
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